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Skumanich, Andrew, Fathallah, Mohamed, Amer, Nabil M. (1989) Observation of light‐induced defect formation in hydrogenated amorphous silicon by subgap illumination. Applied Physics Letters, 54 (19). 1887-1889 doi:10.1063/1.101231

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Reference TypeJournal (article/letter/editorial)
TitleObservation of light‐induced defect formation in hydrogenated amorphous silicon by subgap illumination
JournalApplied Physics Letters
AuthorsSkumanich, AndrewAuthor
Fathallah, MohamedAuthor
Amer, Nabil M.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101231Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486504Long-form Identifiermindat:1:5:8486504:9
GUID0
Full ReferenceSkumanich, Andrew, Fathallah, Mohamed, Amer, Nabil M. (1989) Observation of light‐induced defect formation in hydrogenated amorphous silicon by subgap illumination. Applied Physics Letters, 54 (19). 1887-1889 doi:10.1063/1.101231
Plain TextSkumanich, Andrew, Fathallah, Mohamed, Amer, Nabil M. (1989) Observation of light‐induced defect formation in hydrogenated amorphous silicon by subgap illumination. Applied Physics Letters, 54 (19). 1887-1889 doi:10.1063/1.101231
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

See Also

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Skumanich, Andrew, Amer, Nabil M. (1988) Light‐induced defects in hydrogenated amorphous silicon alloys. Applied Physics Letters, 52 (8). 643-644 doi:10.1063/1.99391
Park, H. R., Liu, J. Z., Wagner, S. (1989) Saturation of the light‐induced defect density in hydrogenated amorphous silicon. Applied Physics Letters, 55 (25). 2658-2660 doi:10.1063/1.101965
Yoon, Jong‐Hwan, Kim, H. L. (1995) Saturation behavior of the defect density in hydrogenated amorphous silicon by continuous and pulsed light illumination. Applied Physics Letters, 66 (22). 3021-3023 doi:10.1063/1.114264
Amer, Nabil M., Skumanich, Andrew, Jackson, Warren B. (1983) The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous silicon. Physica B+C, 117. 897-898 doi:10.1016/0378-4363(83)90687-3
Amer, Nabil M., Skumanich, Andrew, Ripple, Dean (1986) Photothermal modulation of the gap distance in scanning tunneling microscopy. Applied Physics Letters, 49 (3). 137-139 doi:10.1063/1.97203
Skumanich, Andrew, Fournier, Daniele, Boccara, A. Claude, Amer, Nabil M. (1985) In situ investigation of transport in semiconductors: A contactless approach. Applied Physics Letters, 47 (4). 402-404 doi:10.1063/1.96125
Okushi, Hideyo, Furui, Tatsuya, Banerjee, Ratnabali, Tanaka, Kazunobu (1989) Light‐induced changes of gap‐state profile in phosphorus‐doped hydrogenated amorphous silicon. Applied Physics Letters, 54 (5). 439-441 doi:10.1063/1.100945
Gleskova, H., Morin, P. A., Wagner, S. (1993) Kinetics of recovery of the light‐induced defects in hydrogenated amorphous silicon under illumination. Applied Physics Letters, 62 (17). 2063-2065 doi:10.1063/1.109480
Chen, Guanghua, Sun, Guosheng, Zhang, Fangqing (1989) Characteristics of electron spin resonance in hydrogenated amorphous silicon‐carbon/hydrogenated amorphous silicon heterojunctions. Applied Physics Letters, 54 (9). 807-809 doi:10.1063/1.100853
Skumanich, Andrew, Amer, Nabil M. (1988) Evidence for the intrinsic nature of light-induced defects in undopeda-Si:H. Physical Review B, 37 (14) 8465-8467 doi:10.1103/physrevb.37.8465
Jackson, W. B., Tsai, C. C., Stutzmann, M. (1989) Response to ‘‘Critique of (time)1/3kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’ ’’ [Appl. Phys. Lett.54, 398 (1989)]. Applied Physics Letters, 54 (4). 399-400 doi:10.1063/1.100975
 
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