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Beresford, R., Luo, L. F., Wang, W. I. (1989) Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature. Applied Physics Letters, 54 (19). 1899-1901 doi:10.1063/1.101235

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Reference TypeJournal (article/letter/editorial)
TitleNegative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature
JournalApplied Physics Letters
AuthorsBeresford, R.Author
Luo, L. F.Author
Wang, W. I.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101235Search in ResearchGate
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Mindat Ref. ID8486513Long-form Identifiermindat:1:5:8486513:7
GUID0
Full ReferenceBeresford, R., Luo, L. F., Wang, W. I. (1989) Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature. Applied Physics Letters, 54 (19). 1899-1901 doi:10.1063/1.101235
Plain TextBeresford, R., Luo, L. F., Wang, W. I. (1989) Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature. Applied Physics Letters, 54 (19). 1899-1901 doi:10.1063/1.101235
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

See Also

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Luo, L. F., Beresford, R., Wang, W. I. (1989) Interband tunneling in polytype GaSb/AlSb/InAs heterostructures. Applied Physics Letters, 55 (19). 2023-2025 doi:10.1063/1.102151
Beresford, R., Luo, L. F., Longenbach, K. F., Wang, W. I. (1990) Interband tunneling in single‐barrier InAs/AlSb/GaSb heterostructures. Applied Physics Letters, 56 (10). 952-954 doi:10.1063/1.102634
Luo, L. F., Beresford, R., Wang, W. I., Munekata, H. (1989) Heterojunction field‐effect transistors based on AlGaSb/InAs. Applied Physics Letters, 55 (8). 789-791 doi:10.1063/1.101761
Luo, L. F., Beresford, R., Wang, W. I. (1988) Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures. Applied Physics Letters, 53 (23). 2320-2322 doi:10.1063/1.100266
Luo, L. F., Beresford, R., Longenbach, K. F., Wang, W. I. (1990) Resonant interband coupling in single‐barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. Journal of Applied Physics, 68 (6). 2854-2857 doi:10.1063/1.346417
Luo, L. F., Beresford, R., Wang, W. I., Mendez, E. E. (1989) Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double‐barrier heterostructures. Applied Physics Letters, 54 (21). 2133-2135 doi:10.1063/1.101149
Beresford, R., Luo, L. F., Wang, W. I., Mendez, E. E. (1989) Resonant tunneling throughX‐valley states in GaAs/AlAs/GaAs single‐barrier heterostructures. Applied Physics Letters, 55 (15). 1555-1557 doi:10.1063/1.102242
Beresford, R., Luo, L. F., Wang, W. I. (1989) Resonant tunneling of holes in AlSb/GaSb/AlSb double‐barrier heterostructures. Applied Physics Letters, 55 (7). 694-695 doi:10.1063/1.101801
Söderström, J. R., Chow, D. H., McGill, T. C. (1989) Demonstration of large peak‐to‐valley current ratios in InAs/AlGaSb/InAs single‐barrier heterostructures. Applied Physics Letters, 55 (13). 1348-1350 doi:10.1063/1.101595
Beresford, R., Luo, L. F., Longenbach, K. F., Wang, W. I. (1990) Resonant interband tunneling through a 110 nm InAs quantum well. Applied Physics Letters, 56 (6). 551-553 doi:10.1063/1.102742
Longenbach, K. F., Luo, L. F., Wang, W. I. (1990) Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures. Applied Physics Letters, 57 (15). 1554-1556 doi:10.1063/1.103351
 
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