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Cunningham, B. T., Haase, M. A., McCollum, M. J., Baker, J. E., Stillman, G. E. (1989) Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride. Applied Physics Letters, 54 (19). 1905-1907 doi:10.1063/1.101237

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Reference TypeJournal (article/letter/editorial)
TitleHeavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
JournalApplied Physics Letters
AuthorsCunningham, B. T.Author
Haase, M. A.Author
McCollum, M. J.Author
Baker, J. E.Author
Stillman, G. E.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101237Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486517Long-form Identifiermindat:1:5:8486517:3
GUID0
Full ReferenceCunningham, B. T., Haase, M. A., McCollum, M. J., Baker, J. E., Stillman, G. E. (1989) Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride. Applied Physics Letters, 54 (19). 1905-1907 doi:10.1063/1.101237
Plain TextCunningham, B. T., Haase, M. A., McCollum, M. J., Baker, J. E., Stillman, G. E. (1989) Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride. Applied Physics Letters, 54 (19). 1905-1907 doi:10.1063/1.101237
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Cunningham, B. T., Baker, J. E., Stillman, G. E. (1990) Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (9). 836-838 doi:10.1063/1.103321
Cunningham, B. T., Stillman, G. E., Jackson, G. S. (1990) Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source. Applied Physics Letters, 56 (4). 361-363 doi:10.1063/1.102785
Cunningham, B. T., Baker, J. E., Stockman, S. A., Stillman, G. E. (1990) Absence of13C incorporation in13CCl4‐doped InP grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (18). 1760-1762 doi:10.1063/1.103092
Reed, A. D., Bose, S. S., Stillman, G. E. (1989) Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (13). 1262-1264 doi:10.1063/1.100733
Stockman, S. A., Hanson, A. W., Jackson, S. L., Baker, J. E., Stillman, G. E. (1993) Effect of post‐growth cooling ambient on acceptor passivation in carbon‐doped GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 62 (11). 1248-1250 doi:10.1063/1.108748
Cunningham, B. T., Guido, L. J., Baker, J. E., Major, J. S., Holonyak, N., Stillman, G. E. (1989) Carbon diffusion in undoped,n‐type, andp‐type GaAs. Applied Physics Letters, 55 (7). 687-689 doi:10.1063/1.101822
Mimila-Arroyo, J., Lusson, A., Chevallier, J., Barbé, M., Theys, B., Jomard, F., Bland, S. W. (2001) Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 79 (19). 3095-3097 doi:10.1063/1.1413718
Stockman, S. A., Fresina, M. T., Hartmann, Q. J., Hanson, A. W., Gardner, N. F., Baker, J. E., Stillman, G. E. (1994) Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors. Journal of Applied Physics, 75 (8). 4233-4236 doi:10.1063/1.356011
Stockman, S. A., Höfler, G. E., Baillargeon, J. N., Hsieh, K. C., Cheng, K. Y., Stillman, G. E. (1992) Characterization of heavily carbon‐doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy. Journal of Applied Physics, 72 (3). 981-987 doi:10.1063/1.351776
Hartmann, Q. J., Gardner, N. F., Horton, T. U., Curtis, A. P., Ahmari, D. A., Fresina, M. T., Baker, J. E., Stillman, G. E. (1997) Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition. Applied Physics Letters, 70 (14). 1822-1824 doi:10.1063/1.118702
Yang, Q., Scott, D. S., Chung, T., Stillman, G. E. (2000) Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition. Applied Physics Letters, 77 (2). 271-273 doi:10.1063/1.126947
 
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