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Ben Amor, S., Martin, K. P., Rascol, J. J. L., Higgins, R. J., Potter, R. C., Lakhani, A. A., Hier, H. (1989) Magnetotransport studies of charge accumulation in an AlInAs/GaInAs tunneling structure. Applied Physics Letters, 54 (19). 1908-1910 doi:10.1063/1.101238

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Reference TypeJournal (article/letter/editorial)
TitleMagnetotransport studies of charge accumulation in an AlInAs/GaInAs tunneling structure
JournalApplied Physics Letters
AuthorsBen Amor, S.Author
Martin, K. P.Author
Rascol, J. J. L.Author
Higgins, R. J.Author
Potter, R. C.Author
Lakhani, A. A.Author
Hier, H.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101238Search in ResearchGate
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Mindat Ref. ID8486518Long-form Identifiermindat:1:5:8486518:2
GUID0
Full ReferenceBen Amor, S., Martin, K. P., Rascol, J. J. L., Higgins, R. J., Potter, R. C., Lakhani, A. A., Hier, H. (1989) Magnetotransport studies of charge accumulation in an AlInAs/GaInAs tunneling structure. Applied Physics Letters, 54 (19). 1908-1910 doi:10.1063/1.101238
Plain TextBen Amor, S., Martin, K. P., Rascol, J. J. L., Higgins, R. J., Potter, R. C., Lakhani, A. A., Hier, H. (1989) Magnetotransport studies of charge accumulation in an AlInAs/GaInAs tunneling structure. Applied Physics Letters, 54 (19). 1908-1910 doi:10.1063/1.101238
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Martin, K. P., Ben Amor, S., Rascol, J. J. L., Higgins, R. J., Potter, R. C., Hier, H. (1990) Trajectory domains in a wide‐well double‐barrier tunneling structure in crossed electric and magnetic fields. Applied Physics Letters, 56 (18). 1772-1774 doi:10.1063/1.103095
Ben Amor, S., Rascol, J. J. L., Martin, K. P., Higgins, R. J., Potter, R. C., Hier, H. (1990) Transverse magnetic field studies inAl1−yInyAs/Ga1−xInxAs quantum-well tunneling structures. Physical Review B, 41 (11) 7860-7863 doi:10.1103/physrevb.41.7860
Belhadj, C. Y., Martin, K. P., Ben Amor, S., Rascol, J. J. L., Higgins, R. J., Potter, R. C., Hier, H., Hempfling, E. (1990) Bias circuit effects on the current‐voltage characteristic of double‐barrier tunneling structures: Experimental and theoretical results. Applied Physics Letters, 57 (1). 58-60 doi:10.1063/1.103577
Ben Amor, S., Martin, K. P., Rascol, J. J. L., Higgins, R. J., Torabi, A., Harris, H. M., Summers, C. J. (1988) Transverse magnetic field dependence of the current‐voltage characteristics of double‐barrier quantum well tunneling structures. Applied Physics Letters, 53 (25). 2540-2542 doi:10.1063/1.100202
Ben Amor, S., Martin, K.P., Rascol, J.J.L., Higgins, R.J., Potter, R.C., Lakhani, A.A., Hier, H. (1990) Magneto electric states in wide-well double barrier tunneling structures. Surface Science, 228 (1). 378-382 doi:10.1016/0039-6028(90)90332-3
Rascol, J. J. L., Martin, K. P., Amor, S. Ben, Higgins, R. J., Celeste, A., Portal, J. C., Torabi, A., Harris, H. M., Summers, C. J. (1990) Magnetospectral analysis of tunneling processes in a double-quantum-well tunneling structure. Physical Review B, 41 (6) 3733-3737 doi:10.1103/physrevb.41.3733
Ben Amor, S., Dmowski, L., Portal, J. C., Martin, K. P., Higgins, R. J., Razeghi, M. (1990) Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction. Applied Physics Letters, 57 (27). 2925-2927 doi:10.1063/1.103732
Rascol, J. J. L., Martin, K. P., Carnahan, R. E., Higgins, R. J., Cury, L. A., Portal, J. C., Park, B. G., Wolak, E., Lear, K. L., Harris, J. S. (1991) Influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes. Applied Physics Letters, 58 (14). 1482-1484 doi:10.1063/1.105203
Carnahan, R. E., Maldonado, M. A., Martin, K. P., Nogaret, A., Higgins, R. J., Cury, L. A., Maude, D. K., Portal, J. C., Chen, J. F., Cho, A. Y. (1993) Γ‐Xintervalley tunneling in InAs/AlSb resonant tunneling diodes. Applied Physics Letters, 62 (12). 1385-1387 doi:10.1063/1.108687
Gregoris, G, Beerens, J, Amor, S Ben, Dmowski, L, Portal, J C, Sivco, D L, Cho, A Y (1987) A study of parallel conduction and the quantum Hall effect in GaInAs-AlInAs heterojunctions using magnetotransport measurements under hydrostatic pressure. Journal of Physics C: Solid State Physics, 20 (3). 425-440 doi:10.1088/0022-3719/20/3/013
King, H.‐X. L., Woo, J. C.‐S., Jensen, J. F., Stanchina, W. E., Ferro, R. J., Metzger, R. A. (1991) Numerical and experimental studies of the intrinsic performance of AlInAs/GaInAs heterojunction bipolar transistors. Journal of Applied Physics, 69 (8). 4426-4430 doi:10.1063/1.348369
 
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