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Schiff, E. A., Devlen, R. I., Grahn, H. T., Tauc, J., Guha, S. (1989) Picosecond electron drift mobility measurements in hydrogenated amorphous silicon. Applied Physics Letters, 54 (19). 1911-1913 doi:10.1063/1.101239

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Reference TypeJournal (article/letter/editorial)
TitlePicosecond electron drift mobility measurements in hydrogenated amorphous silicon
JournalApplied Physics Letters
AuthorsSchiff, E. A.Author
Devlen, R. I.Author
Grahn, H. T.Author
Tauc, J.Author
Guha, S.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101239Search in ResearchGate
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Mindat Ref. ID8486521Long-form Identifiermindat:1:5:8486521:6
GUID0
Full ReferenceSchiff, E. A., Devlen, R. I., Grahn, H. T., Tauc, J., Guha, S. (1989) Picosecond electron drift mobility measurements in hydrogenated amorphous silicon. Applied Physics Letters, 54 (19). 1911-1913 doi:10.1063/1.101239
Plain TextSchiff, E. A., Devlen, R. I., Grahn, H. T., Tauc, J., Guha, S. (1989) Picosecond electron drift mobility measurements in hydrogenated amorphous silicon. Applied Physics Letters, 54 (19). 1911-1913 doi:10.1063/1.101239
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Hattori, R., Shirafuji, J. (1989) Longitudinal electron drift mobility of hydrogenated amorphous silicon/silicon nitride multilayer structures revealed by time‐of‐flight measurements. Applied Physics Letters, 54 (12). 1118-1120 doi:10.1063/1.101478
Wang, Qi, Antoniadis, Homer, Schiff, E. A. (1992) Electron drift mobility measurements on annealed and light‐soaked hydrogenated amorphous silicon. Applied Physics Letters, 60 (22). 2791-2793 doi:10.1063/1.106829
Wang, Qi, Antoniadis, Homer, Schiff, E. A., Guha, S. (1993) Electron-drift-mobility measurements and exponential conduction-band tails in hydrogenated amorphous silicon-germanium alloys. Physical Review B, 47 (15) 9435-9448 doi:10.1103/physrevb.47.9435
Grahn, H. T., Maris, H. J., Tauc, J., Hatton, K. S. (1988) Elastic properties of silicon oxynitride films determined by picosecond acoustics. Applied Physics Letters, 53 (23). 2281-2283 doi:10.1063/1.100253
Devlen, R.I., Tauc, J., Schiff, E.A. (1989) Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:H. Journal of Non-Crystalline Solids, 114. 567-569 doi:10.1016/0022-3093(89)90652-2
Strait, J., Tauc, J. (1985) Light‐induced defects in hydrogenated amorphous silicon observed by picosecond photoinduced absorption. Applied Physics Letters, 47 (6). 589-591 doi:10.1063/1.96081
Antoniadis, Homer, Devlen, R.I., Esipov, Sergei, Guha, S., Schiff, E.A., Tauc, J. (1991) High-field electron drift in a-Si:H. Journal of Non-Crystalline Solids, 137. 407-410 doi:10.1016/s0022-3093(05)80141-3
Dylla, T., Finger, F., Schiff, E. A. (2005) Hole drift-mobility measurements in microcrystalline silicon. Applied Physics Letters, 87 (3). 32103pp. doi:10.1063/1.1984087
Lyou, J. H., Schiff, E. A., Guha, S., Yang, J. (2001) Electroabsorption measurements and built-in potentials in amorphous silicon–germanium solar cells. Applied Physics Letters, 78 (13). 1924-1926 doi:10.1063/1.1356443
Liang, Jianjun, Schiff, E. A., Guha, S., Yan, Baojie, Yang, J. (2006) Hole-mobility limit of amorphous silicon solar cells. Applied Physics Letters, 88 (6). 63512pp. doi:10.1063/1.2170405
Balberg, I., Epstein, K. A., Ritter, D. (1989) Ambipolar diffusion length measurements in hydrogenated amorphous silicon. Applied Physics Letters, 54 (24). 2461-2463 doi:10.1063/1.101072
 
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