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Azoulay, R., Remiens, D., Menigaux, L., Dugrand, L. (1989) Application of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling technique. Applied Physics Letters, 54 (19). 1857-1858 doi:10.1063/1.101258

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Reference TypeJournal (article/letter/editorial)
TitleApplication of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling technique
JournalApplied Physics Letters
AuthorsAzoulay, R.Author
Remiens, D.Author
Menigaux, L.Author
Dugrand, L.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101258Search in ResearchGate
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Mindat Ref. ID8486544Long-form Identifiermindat:1:5:8486544:7
GUID0
Full ReferenceAzoulay, R., Remiens, D., Menigaux, L., Dugrand, L. (1989) Application of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling technique. Applied Physics Letters, 54 (19). 1857-1858 doi:10.1063/1.101258
Plain TextAzoulay, R., Remiens, D., Menigaux, L., Dugrand, L. (1989) Application of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling technique. Applied Physics Letters, 54 (19). 1857-1858 doi:10.1063/1.101258
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Azoulay, R., Draidia, N., Gao, Y., Dugrand, L., Leroux, G. (1989) Autodoping of GaAs grown by organometallic vapor phase epitaxy on silicon substrates. Applied Physics Letters, 54 (24). 2402-2404 doi:10.1063/1.101090
Azoulay, R., Dugrand, L. (1991) Selective growth of GaAs by organometallic vapor phase epitaxy at atmospheric pressure. Applied Physics Letters, 58 (2). 128-130 doi:10.1063/1.104949
Ribot, H., Sansonetti, P., Brandon, J., Carre, M., Menigaux, L., Azoulay, R., Bouadma, N. (1989) Monolithic integration of GaAs/GaAlAs buried‐heterostructure orthogonal facet laser and optical waveguide. Applied Physics Letters, 54 (6). 475-477 doi:10.1063/1.100954
Raffle, Y., Kuszelewicz, R., Azoulay, R., Le Roux, G., Michel, J. C., Dugrand, L., Toussaere, E. (1993) Insitumetalorganic vapor phase epitaxy control of GaAs/AlAs Bragg reflectors by laser reflectometry at 514 nm. Applied Physics Letters, 63 (25). 3479-3481 doi:10.1063/1.110126
Remiens, D., Rose, B., Carre, M., Hornung, V. (1990) GaInAsP/InP integrated ridge laser with a butt‐jointed transparent optical waveguide fabricated by single‐step metalorganic vapor‐phase epitaxy. Journal of Applied Physics, 68 (5). 2450-2453 doi:10.1063/1.346505
Dogheche, E., Remiens, D., Omnes, F. (1999) Optical properties of low-pressure metalorganic vapor phase epitaxy AlxGa1−xN thin-film waveguides by prism coupling technique. Applied Physics Letters, 74 (26). 3960-3962 doi:10.1063/1.124236
Pribat, D., Karapiperis, L., Collet, C. (1989) Conformal vapor phase epitaxy. Applied Physics Letters, 55 (24). 2544-2546 doi:10.1063/1.101976
Colas, E., Yi‐Yan, A., Bhat, R., Seto, M., Deri, R. J. (1989) Design of guided‐wave components using growth of GaAs/AlGaAs superlattices on patterned substrates by organometallic chemical vapor deposition. Applied Physics Letters, 54 (16). 1501-1503 doi:10.1063/1.101334
Botez, D., Mawst, L. J., Peterson, G., Roth, T. J. (1989) Resonant optical transmission and coupling in phase‐locked diode laser arrays of antiguides: The resonant optical waveguide array. Applied Physics Letters, 54 (22). 2183-2185 doi:10.1063/1.101159
Lindström, C., Paoli, T. L., Burnham, R. D., Scifres, D. R., Streifer, W. (1983) Long‐lived GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 43 (3). 278-280 doi:10.1063/1.94301
Liou, K.‐Y., Koren, U., Chandrasekhar, S., Koch, T. L., Shahar, A., Burrus, C. A., Gnall, R. P. (1989) Monolithic integrated InGaAsP/InP distributed feedback laser with Y‐branching waveguide and a monitoring photodetector grown by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (2). 114-116 doi:10.1063/1.101245
 
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