Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lee, D. H., Li, Sheng S., Sauer, N. J., Chang, T. Y. (1989) High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As. Applied Physics Letters, 54 (19). 1863-1865 doi:10.1063/1.101261

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleHigh quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As
JournalApplied Physics Letters
AuthorsLee, D. H.Author
Li, Sheng S.Author
Sauer, N. J.Author
Chang, T. Y.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101261Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486550Long-form Identifiermindat:1:5:8486550:8
GUID0
Full ReferenceLee, D. H., Li, Sheng S., Sauer, N. J., Chang, T. Y. (1989) High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As. Applied Physics Letters, 54 (19). 1863-1865 doi:10.1063/1.101261
Plain TextLee, D. H., Li, Sheng S., Sauer, N. J., Chang, T. Y. (1989) High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As. Applied Physics Letters, 54 (19). 1863-1865 doi:10.1063/1.101261
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Kuang, J. B., Tasker, P. J., Chen, Y. K., Wang, G. W., Eastman, L. F., Aina, O. A., Hier, H., Fathimulla, A. (1989) Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1136-1138 doi:10.1063/1.100740
Won, T., Agarwala, S., Morkoç, H. (1988) In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxy. Applied Physics Letters, 53 (23). 2311-2313 doi:10.1063/1.100263
Shi, J., Wichmann, N., Roelens, Y., Bollaert, S. (2011) Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate. Applied Physics Letters, 99 (20). 203505pp. doi:10.1063/1.3663533
Shi, J., Wichmann, N., Roelens, Y., Bollaert, S. (2013) Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions. Applied Physics Letters, 102 (24). 243503pp. doi:10.1063/1.4811787
Lee, H. J., Anderson, W. A., Hardtdegen, H., Lüth, H. (1993) Barrier height enhancement of Schottky diodes onn‐In0.53Ga0.47As by cryogenic processing. Applied Physics Letters, 63 (14). 1939-1941 doi:10.1063/1.110607
Hwang, K. C., Li, Sheng S., Park, C., Anderson, T. J. (1990) Schottky barrier height enhancement ofn‐In0.53Ga0.47As by a novel chemical passivation technique. Journal of Applied Physics, 67 (10). 6571-6573 doi:10.1063/1.345138
Chen, Y. F., Dai, Y. T., Lo, I. (1996) Observation of double cyclotron resonance in modulation‐δ‐doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection. Applied Physics Letters, 68 (8). 1117-1119 doi:10.1063/1.115731
Griem, H. T., Ray, S., Freeman, J. L., West, D. L. (1990) Long‐wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(GaxAl1−x)0.47As/In0.53Ga0.47As metal‐semiconductor‐metal photodetector. Applied Physics Letters, 56 (11). 1067-1068 doi:10.1063/1.102567
Scott, J. S., Kaminski, J. P., Wanke, M., Allen, S. J., Chow, D. H., Lui, M., Liu, T. Y. (1994) Terahertz frequency response of an In0.53Ga0.47As/AlAs resonant‐tunneling diode. Applied Physics Letters, 64 (15). 1995-1997 doi:10.1063/1.111717
Chiu, H. C., Tung, L. T., Chang, Y. H., Lee, Y. J., Chang, C. C., Kwo, J., Hong, M. (2008) Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As. Applied Physics Letters, 93 (20). 202903pp. doi:10.1063/1.3027476
Chang, Y. C., Huang, M. L., Lee, K. Y., Lee, Y. J., Lin, T. D., Hong, M., Kwo, J., Lay, T. S., Liao, C. C., Cheng, K. Y. (2008) Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters. Applied Physics Letters, 92 (7). 72901pp. doi:10.1063/1.2883967
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 25, 2025 02:12:27
Go to top of page