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Ito, Fumihiko, Tanifuji, Tadatoshi (1989) Carrier‐injection‐type optical switch in GaAs with a 1.06–1.55 μm wavelength range. Applied Physics Letters, 54 (2). 134-136 doi:10.1063/1.101207

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Reference TypeJournal (article/letter/editorial)
TitleCarrier‐injection‐type optical switch in GaAs with a 1.06–1.55 μm wavelength range
JournalApplied Physics Letters
AuthorsIto, FumihikoAuthor
Tanifuji, TadatoshiAuthor
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101207Search in ResearchGate
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Mindat Ref. ID8486592Long-form Identifiermindat:1:5:8486592:4
GUID0
Full ReferenceIto, Fumihiko, Tanifuji, Tadatoshi (1989) Carrier‐injection‐type optical switch in GaAs with a 1.06–1.55 μm wavelength range. Applied Physics Letters, 54 (2). 134-136 doi:10.1063/1.101207
Plain TextIto, Fumihiko, Tanifuji, Tadatoshi (1989) Carrier‐injection‐type optical switch in GaAs with a 1.06–1.55 μm wavelength range. Applied Physics Letters, 54 (2). 134-136 doi:10.1063/1.101207
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

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Hirota, Y., Hirono, T., Ishibashi, T., Ito, H. (2001) Traveling-wave photodetector for 1.55 μm wavelength fabricated with unitraveling-carrier photodiodes. Applied Physics Letters, 78 (24). 3767-3769 doi:10.1063/1.1377849
Huang, H. C., Yee, S. (1991) Change in refractive index forp‐type GaAs at λ=1.06, 1.3, and 1.55 μm due to free carriers. Journal of Applied Physics, 70 (2). 925-929 doi:10.1063/1.349600
Zhao, Yang, Wu, Cunkai, Shah, Pankaj, Kim, M. K., Dawson, L. Ralph (1993) Optical phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength. Applied Physics Letters, 63 (3). 281-283 doi:10.1063/1.110078
Li, Baojun, Li, Guozheng, Liu, Enke, Jiang, Zuimin, Pei, Chengwen, Wang, Xun (1999) 1.55 μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect. Applied Physics Letters, 75 (1). 1-3 doi:10.1063/1.124635
Grabmaier, A., Schöfthaler, M., Hangleiter, A., Kazmierski, C., Blez, M., Ougazzaden, A. (1993) Carrier transport limited bandwidth of 1.55 μm quantum‐well lasers. Applied Physics Letters, 62 (1). 52-54 doi:10.1063/1.108816
Eom, J., Su, C. B. (1989) Observation of positive and negative nonlinear gain in an optical injection experiment: Proof of the cavity standing‐wave‐induced nonlinear gain theory in 1.3 μm wavelength semiconductor diode lasers. Applied Physics Letters, 54 (18). 1734-1736 doi:10.1063/1.101274
Li, Baojun, Chua, Soo-Jin (2002) High carrier injection optical switch based on two-mode interference in SiGe alloy. Applied Physics Letters, 80 (2). 180-182 doi:10.1063/1.1432758
Huang, H. C., Yee, S., Soma, M. (1990) The carrier effects on the change of refractive index forn‐type GaAs at λ=1.06,1.3, and 1.55 μm. Journal of Applied Physics, 67 (3). 1497-1503 doi:10.1063/1.345658
Numai, T., Murata, S., Mito, I. (1989) 1.5 μm tunable wavelength filter using a phase‐shift‐controlled distributed feedback laser diode with a wide tuning range and a high constant gain. Applied Physics Letters, 54 (19). 1859-1860 doi:10.1063/1.101259
Woodward, T. K., Sizer, Theodore, Sivco, D. L., Cho, A. Y. (1990) InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range. Applied Physics Letters, 57 (6). 548-550 doi:10.1063/1.103643
Sarzała, Robert P., Nakwaski, Włodzimierz (2007) GaInNAsSb/GaNAs quantum-well VCSELs: Modeling and physical analysis in the 1.50−1.55 μm wavelength range. Journal of Applied Physics, 101 (7). 73103pp. doi:10.1063/1.2719009
 
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