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Dharmadasa, I. M., Thornton, J. M., Williams, R. H. (1989) Effects of surface treatments on Schottky barrier formation at metal/n‐type CdTe contacts. Applied Physics Letters, 54 (2). 137-139 doi:10.1063/1.101208

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Reference TypeJournal (article/letter/editorial)
TitleEffects of surface treatments on Schottky barrier formation at metal/n‐type CdTe contacts
JournalApplied Physics Letters
AuthorsDharmadasa, I. M.Author
Thornton, J. M.Author
Williams, R. H.Author
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101208Search in ResearchGate
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Mindat Ref. ID8486595Long-form Identifiermindat:1:5:8486595:1
GUID0
Full ReferenceDharmadasa, I. M., Thornton, J. M., Williams, R. H. (1989) Effects of surface treatments on Schottky barrier formation at metal/n‐type CdTe contacts. Applied Physics Letters, 54 (2). 137-139 doi:10.1063/1.101208
Plain TextDharmadasa, I. M., Thornton, J. M., Williams, R. H. (1989) Effects of surface treatments on Schottky barrier formation at metal/n‐type CdTe contacts. Applied Physics Letters, 54 (2). 137-139 doi:10.1063/1.101208
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

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Dharmadasa, I. M., Herrenden‐Harker, W. G., Williams, R. H. (1986) Metals on cadmium telluride: Schottky barriers and interface reactions. Applied Physics Letters, 48 (26). 1802-1804 doi:10.1063/1.96792
Waldrop, J. R. (1988) Metal contacts top‐type GaAs with large Schottky barrier heights. Applied Physics Letters, 53 (16). 1518-1520 doi:10.1063/1.99943
Coratger, R., Girardin, C., Beauvillain, J., Dharmadasa, I. M., Samanthilake, A. P., Frost, J. E. F., Prior, K. A., Cavenett, B. C. (1997) Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe by ballistic electron emission microscopy. Journal of Applied Physics, 81 (12). 7870-7875 doi:10.1063/1.365395
Allen, M. W., Mendelsberg, R. J., Reeves, R. J., Durbin, S. M. (2009) Oxidized noble metal Schottky contacts to n-type ZnO. Applied Physics Letters, 94 (10). 103508pp. doi:10.1063/1.3089871
Waldrop, J. R., Grant, R. W. (1990) Formation and Schottky barrier height of metal contacts to β‐SiC. Applied Physics Letters, 56 (6). 557-559 doi:10.1063/1.102744
Sobiesierski, Z., Dharmadasa, I. M., Williams, R. H. (1988) Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces. Applied Physics Letters, 53 (26). 2623-2625 doi:10.1063/1.100178
Lee, M. L., Sheu, J. K., Lin, S. W. (2006) Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer. Applied Physics Letters, 88 (3). 32103pp. doi:10.1063/1.2166477
Dimitriadis, C. A., Logothetidis, S., Alexandrou, I. (1995) Schottky barrier contacts of titanium nitride on n‐type silicon. Applied Physics Letters, 66 (4). 502-504 doi:10.1063/1.114070
Oder, T. N., Martin, P., Lin, J. Y., Jiang, H. X., Williams, J. R., Isaacs-Smith, T. (2006) Thermally stable Schottky contacts on n-type GaN using ZrB2. Applied Physics Letters, 88 (18). 183505pp. doi:10.1063/1.2199611
Liliental‐Weber, Z., Newman, N., Washburn, J., Weber, E. R., Spicer, W. E. (1989) Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts. Applied Physics Letters, 54 (4). 356-358 doi:10.1063/1.100968
Heslinga, D. R., Klapwijk, T. M. (1989) Schottky barrier and contact resistance at a niobium/silicon interface. Applied Physics Letters, 54 (11). 1048-1050 doi:10.1063/1.100793
 
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