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Bestwick, T. D., Oehrlein, G. S., Angell, D., Jones, P. L., Corbett, J. W. (1989) Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior. Applied Physics Letters, 54 (23). 2321-2323 doi:10.1063/1.101115

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Reference TypeJournal (article/letter/editorial)
TitleStudy of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior
JournalApplied Physics Letters
AuthorsBestwick, T. D.Author
Oehrlein, G. S.Author
Angell, D.Author
Jones, P. L.Author
Corbett, J. W.Author
Year1989 (June 5)Volume54
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.101115Search in ResearchGate
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Mindat Ref. ID8486907Long-form Identifiermindat:1:5:8486907:2
GUID0
Full ReferenceBestwick, T. D., Oehrlein, G. S., Angell, D., Jones, P. L., Corbett, J. W. (1989) Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior. Applied Physics Letters, 54 (23). 2321-2323 doi:10.1063/1.101115
Plain TextBestwick, T. D., Oehrlein, G. S., Angell, D., Jones, P. L., Corbett, J. W. (1989) Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior. Applied Physics Letters, 54 (23). 2321-2323 doi:10.1063/1.101115
In(1989, June) Applied Physics Letters Vol. 54 (23) AIP Publishing

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Oehrlein, G. S., Bestwick, T. D., Jones, P. L., Corbett, J. W. (1990) Selective dry etching of silicon with respect to germanium. Applied Physics Letters, 56 (15). 1436-1438 doi:10.1063/1.102490
Bestwick, Tim D., Oehrlein, Gottlieb S., Angell, David (1990) Cryogenic reactive ion etching of silicon in SF6. Applied Physics Letters, 57 (5). 431-433 doi:10.1063/1.104240
Bestwick, Tim D., Oehrlein, Gottlieb S. (1989) Tungsten etching mechanisms in CF4/O2reactive ion etching plasmas. Journal of Applied Physics, 66 (10). 5034-5038 doi:10.1063/1.343776
Oehrlein, G. S., Zhang, Y., Kroesen, G. M. W., de Frésart, E., Bestwick, T. D. (1991) Interactive effects in the reactive ion etching of SiGe alloys. Applied Physics Letters, 58 (20). 2252-2254 doi:10.1063/1.104942
Oehrlein, G. S., Kalish, R. (1989) Silicon loss and transient etch rate in selective reactive ion etching of oxide overlayers. Applied Physics Letters, 54 (26). 2698-2700 doi:10.1063/1.100673
Bestwick, Tim D., Oehrlein, Gottlieb S., Zhang, Ying, Kroesen, Gerrit M. W., de Frésart, Edouard (1991) Reactive ion etching of SiGe alloys using HBr. Applied Physics Letters, 59 (3). 336-338 doi:10.1063/1.105588
Doemling, M. F., Rueger, N. R., Oehrlein, G. S. (1996) Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas. Applied Physics Letters, 68 (1). 10-12 doi:10.1063/1.116772
Lindström, J. L., Oehrlein, G. S., Scilla, G. J., Yapsir, A. S., Corbett, J. W. (1989) Effects of deuterium plasmas on silicon near‐surface properties. Journal of Applied Physics, 65 (8). 3297-3300 doi:10.1063/1.342666
Robey, S.W., Oehrlein, G.S. (1989) Flourination of the silicon dioxide surface during reactive ion and plasma etching in halocarbon plasmas. Surface Science Letters, 210 (3). doi:10.1016/0167-2584(89)90814-1
Zhang, Ying, Oehrlein, Gottlieb S., de Frésart, Edouard, Corbett, James W. (1992) Reactive ion etching of SiGe alloys using CF2Cl2. Journal of Applied Physics, 71 (4). 1936-1942 doi:10.1063/1.351183
Robey, S. W., Jaso, M. A., Oehrlein, G. S. (1989) A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2in CF4. Journal of Applied Physics, 65 (8). 2951-2956 doi:10.1063/1.342742
 
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