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Cho, J., Thompson, C. V. (1989) Grain size dependence of electromigration‐induced failures in narrow interconnects. Applied Physics Letters, 54 (25). 2577-2579 doi:10.1063/1.101054

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Reference TypeJournal (article/letter/editorial)
TitleGrain size dependence of electromigration‐induced failures in narrow interconnects
JournalApplied Physics Letters
AuthorsCho, J.Author
Thompson, C. V.Author
Year1989 (June 19)Volume54
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.101054Search in ResearchGate
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Mindat Ref. ID8487048Long-form Identifiermindat:1:5:8487048:5
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Full ReferenceCho, J., Thompson, C. V. (1989) Grain size dependence of electromigration‐induced failures in narrow interconnects. Applied Physics Letters, 54 (25). 2577-2579 doi:10.1063/1.101054
Plain TextCho, J., Thompson, C. V. (1989) Grain size dependence of electromigration‐induced failures in narrow interconnects. Applied Physics Letters, 54 (25). 2577-2579 doi:10.1063/1.101054
In(1989, June) Applied Physics Letters Vol. 54 (25) AIP Publishing

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Hau-Riege, C. S., Thompson, C. V. (2001) Electromigration in Cu interconnects with very different grain structures. Applied Physics Letters, 78 (22). 3451-3453 doi:10.1063/1.1355304
Knowlton, B. D., Clement, J. J., Thompson, C. V. (1997) Simulation of the effects of grain structure and grain growth on electromigration and the reliability of interconnects. Journal of Applied Physics, 81 (9). 6073-6080 doi:10.1063/1.364446
Wei, Frank L., Gan, Chee Lip, Tan, Tam Lyn, Hau-Riege, Christine S., Marathe, Amit P., Vlassak, Joost J., Thompson, Carl V. (2008) Electromigration-induced extrusion failures in Cu/low-k interconnects. Journal of Applied Physics, 104 (2). 23529pp. doi:10.1063/1.2957057
Srikar, V. T., Thompson, C. V. (1999) Diffusion and electromigration of copper in SiO2-passivated single-crystal aluminum interconnects. Applied Physics Letters, 74 (1). 37-39 doi:10.1063/1.123125
Srikar, V. T., Thompson, C. V. (1998) The effect of Al3Ti capping layers on electromigration in single-crystal aluminum interconnects. Applied Physics Letters, 72 (21). 2677-2679 doi:10.1063/1.121096
Choi, Zung-Sun, Mönig, Reiner, Thompson, Carl V. (2007) Dependence of the electromigration flux on the crystallographic orientations of different grains in polycrystalline copper interconnects. Applied Physics Letters, 90 (24). 241913pp. doi:10.1063/1.2742285
Sullivan, Timothy D. (1989) Thermal dependence of voiding in narrow aluminum microelectronic interconnects. Applied Physics Letters, 55 (23). 2399-2401 doi:10.1063/1.102027
Kahn, H., Thompson, C. V. (1991) Effect of applied mechanical stress on the electromigration failure times of aluminum interconnects. Applied Physics Letters, 59 (11). 1308-1310 doi:10.1063/1.105483
Joo, Young-Chang, Thompson, Carl V. (1997) Electromigration-induced transgranular failure mechanisms in single-crystal aluminum interconnects. Journal of Applied Physics, 81 (9). 6062-6072 doi:10.1063/1.364454
Chang, C. W., Thompson, C. V., Gan, C. L., Pey, K. L., Choi, W. K., Lim, Y. K. (2007) Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Applied Physics Letters, 90 (19). 193505pp. doi:10.1063/1.2714315
Sanchez, John E., Kraft, Oliver, Arzt, Eduard (1992) Electromigration induced transgranular slit failures in near bamboo Al and Al‐2% Cu thin‐film interconnects. Applied Physics Letters, 61 (26). 3121-3123 doi:10.1063/1.107980
 
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