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Wang, P. J., Fang, F. F., Meyerson, B. S., Nocera, J., Parker, B. (1989) Two‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures. Applied Physics Letters, 54 (26). 2701-2703 doi:10.1063/1.101019

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Reference TypeJournal (article/letter/editorial)
TitleTwo‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures
JournalApplied Physics Letters
AuthorsWang, P. J.Author
Fang, F. F.Author
Meyerson, B. S.Author
Nocera, J.Author
Parker, B.Author
Year1989 (June 26)Volume54
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.101019Search in ResearchGate
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Mindat Ref. ID8487112Long-form Identifiermindat:1:5:8487112:9
GUID0
Full ReferenceWang, P. J., Fang, F. F., Meyerson, B. S., Nocera, J., Parker, B. (1989) Two‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures. Applied Physics Letters, 54 (26). 2701-2703 doi:10.1063/1.101019
Plain TextWang, P. J., Fang, F. F., Meyerson, B. S., Nocera, J., Parker, B. (1989) Two‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures. Applied Physics Letters, 54 (26). 2701-2703 doi:10.1063/1.101019
In(1989, June) Applied Physics Letters Vol. 54 (26) AIP Publishing

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Wang, P. J., Meyerson, B. S., Fang, F. F., Nocera, J., Parker, B. (1989) High hole mobility in Si/Si1−xGex/Sip‐type modulation‐doped double heterostructures. Applied Physics Letters, 55 (22). 2333-2335 doi:10.1063/1.102274
Nelson, S. F., Ismail, K., Nocera, J. J., Fang, F. F., Mendez, E. E., Chu, J. O., Meyerson, B. S. (1992) Observation of the fractional quantum Hall effect in Si/SiGe heterostructures. Applied Physics Letters, 61 (1). 64-66 doi:10.1063/1.107670
Nelson, S. F., Ismail, K., Jackson, T. N., Nocera, J. J., Chu, J. O., Meyerson, B. S. (1993) Systematics of electron mobility in Si/SiGe heterostructures. Applied Physics Letters, 63 (6). 794-796 doi:10.1063/1.109910
Fang, F.F., Wang, P.J., Meyerson, B.S., Nocera, J.J., Ismail, K.E. (1992) Two-dimensional hole gas in Si/SiGe heterostructures. Surface Science, 263 (1). 175-178 doi:10.1016/0039-6028(92)90331-y
Ismail, K., Meyerson, B. S., Wang, P. J. (1991) High electron mobility in modulation‐doped Si/SiGe. Applied Physics Letters, 58 (19). 2117-2119 doi:10.1063/1.104978
Ismail, K., Arafa, M., Saenger, K. L., Chu, J. O., Meyerson, B. S. (1995) Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures. Applied Physics Letters, 66 (9). 1077-1079 doi:10.1063/1.113577
Myronov, M., Irisawa, T., Mironov, O. A., Koh, S., Shiraki, Y., Whall, T. E., Parker, E. H. C. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures. Applied Physics Letters, 80 (17). 3117-3119 doi:10.1063/1.1473690
Nelson, S. F., Ismail, K., Chu, J. O., Meyerson, B. S. (1993) Room‐temperature electron mobility in strained Si/SiGe heterostructures. Applied Physics Letters, 63 (3). 367-369 doi:10.1063/1.110045
Ismail, K., Arafa, M., Stern, Frank, Chu, J. O., Meyerson, B. S. (1995) Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures. Applied Physics Letters, 66 (7). 842-844 doi:10.1063/1.113440
Ismail, K., Meyerson, B. S., Wang, P. J. (1991) Electron resonant tunneling in Si/SiGe double barrier diodes. Applied Physics Letters, 59 (8). 973-975 doi:10.1063/1.106319
Ismail, K., Nelson, S. F., Chu, J. O., Meyerson, B. S. (1993) Electron transport properties of Si/SiGe heterostructures: Measurements and device implications. Applied Physics Letters, 63 (5). 660-662 doi:10.1063/1.109949
 
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