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Sajoto, T., Santos, M., Heremans, J. J., Shayegan, M., Heiblum, M., Weckwerth, M. V., Meirav, U. (1989) Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low‐temperature mobility of 2×106cm2/V s. Applied Physics Letters, 54 (9). 840-842 doi:10.1063/1.100862

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Reference TypeJournal (article/letter/editorial)
TitleUse of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low‐temperature mobility of 2×106cm2/V s
JournalApplied Physics Letters
AuthorsSajoto, T.Author
Santos, M.Author
Heremans, J. J.Author
Shayegan, M.Author
Heiblum, M.Author
Weckwerth, M. V.Author
Meirav, U.Author
Year1989 (February 27)Volume54
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.100862Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487624Long-form Identifiermindat:1:5:8487624:9
GUID0
Full ReferenceSajoto, T., Santos, M., Heremans, J. J., Shayegan, M., Heiblum, M., Weckwerth, M. V., Meirav, U. (1989) Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low‐temperature mobility of 2×106cm2/V s. Applied Physics Letters, 54 (9). 840-842 doi:10.1063/1.100862
Plain TextSajoto, T., Santos, M., Heremans, J. J., Shayegan, M., Heiblum, M., Weckwerth, M. V., Meirav, U. (1989) Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low‐temperature mobility of 2×106cm2/V s. Applied Physics Letters, 54 (9). 840-842 doi:10.1063/1.100862
In(1989, February) Applied Physics Letters Vol. 54 (9) AIP Publishing

See Also

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Meirav, U., Heiblum, M., Stern, Frank (1988) High‐mobility variable‐density two‐dimensional electron gas in inverted GaAs‐AlGaAs heterojunctions. Applied Physics Letters, 52 (15). 1268-1270 doi:10.1063/1.99176
Shayegan, M., Wang, J. K., Santos, M., Sajoto, T., Goldberg, B. B. (1989) Fractional quantum Hall effect in a high‐mobility GaAs/AlxGa1−xAs multiple quantum well heterostructure. Applied Physics Letters, 54 (1). 27-29 doi:10.1063/1.100820
Shayegan, M., Goldman, V. J., Jiang, C., Sajoto, T., Santos, M. (1988) Growth of low‐density two‐dimensional electron system with very high mobility by molecular beam epitaxy. Applied Physics Letters, 52 (13). 1086-1088 doi:10.1063/1.99219
Shayegan, M., Goldman, V. J., Santos, M., Sajoto, T., Engel, L., Tsui, D. C. (1988) Two‐dimensional electron system with extremely low disorder. Applied Physics Letters, 53 (21). 2080-2082 doi:10.1063/1.100306
Heremans, J. J., Santos, M. B., Hirakawa, K., Shayegan, M. (1994) Mobility anisotropy of two‐dimensional hole systems in (311)A GaAs/AlxGa1−xAs heterojunctions. Journal of Applied Physics, 76 (3). 1980-1982 doi:10.1063/1.358419
Santos, M., Sajoto, T., Zrenner, A., Shayegan, M. (1988) Effect of substrate temperature on migration of Si in planar‐doped GaAs. Applied Physics Letters, 53 (25). 2504-2506 doi:10.1063/1.100225
Santos, M., Sajoto, T., Zrenner, A., Shayegan, M. (1989) Erratum: Effect of substrate temperature on migration of Si in planar‐doped GaAs [Appl. Phys. Lett. 53, 2504 (1988)]. Applied Physics Letters, 55 (6). 603 doi:10.1063/1.102377
Sajoto, T., Jo, J., Santos, M., Shayegan, M. (1989) High quality electron system with variable electron layer thickness in a parabolic quantum well. Applied Physics Letters, 55 (14). 1430-1432 doi:10.1063/1.101577
Knoedler, C. M., Osterling, L., Heiblum, M. (1989) Inert gas reactive ion etching damage to GaAs using inverted heterojunctions. Journal of Applied Physics, 65 (4). 1800-1802 doi:10.1063/1.342910
Shayegan, M., Sajoto, T., Santos, M., Silvestre, C. (1988) Realization of a quasi‐three‐dimensional modulation‐doped semiconductor structure. Applied Physics Letters, 53 (9). 791-793 doi:10.1063/1.99834
Umansky, V., Heiblum, M., Levinson, Y., Smet, J., Nübler, J., Dolev, M. (2009) MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs. Journal of Crystal Growth, 311 (7). 1658-1661 doi:10.1016/j.jcrysgro.2008.09.151
 
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