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Kagawa, Toshiaki, Kawamura, Yuichi, Asai, Hiromitsu, Naganuma, Mitsuru, Mikami, Osamu (1989) Impact ionization rates in an InGaAs/InAlAs superlattice. Applied Physics Letters, 55 (10). 993-995 doi:10.1063/1.101699

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Reference TypeJournal (article/letter/editorial)
TitleImpact ionization rates in an InGaAs/InAlAs superlattice
JournalApplied Physics Letters
AuthorsKagawa, ToshiakiAuthor
Kawamura, YuichiAuthor
Asai, HiromitsuAuthor
Naganuma, MitsuruAuthor
Mikami, OsamuAuthor
Year1989 (September 4)Volume55
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.101699Search in ResearchGate
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Mindat Ref. ID8487729Long-form Identifiermindat:1:5:8487729:3
GUID0
Full ReferenceKagawa, Toshiaki, Kawamura, Yuichi, Asai, Hiromitsu, Naganuma, Mitsuru, Mikami, Osamu (1989) Impact ionization rates in an InGaAs/InAlAs superlattice. Applied Physics Letters, 55 (10). 993-995 doi:10.1063/1.101699
Plain TextKagawa, Toshiaki, Kawamura, Yuichi, Asai, Hiromitsu, Naganuma, Mitsuru, Mikami, Osamu (1989) Impact ionization rates in an InGaAs/InAlAs superlattice. Applied Physics Letters, 55 (10). 993-995 doi:10.1063/1.101699
In(1989, September) Applied Physics Letters Vol. 55 (10) AIP Publishing

See Also

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Kagawa, Toshiaki, Kawamura, Yuichi, Asai, Hiromitsu, Naganuma, Mitsuru (1990) InGaAs/InAlAs superlattice avalanche photodiode with a separated photoabsorption layer. Applied Physics Letters, 57 (18). 1895-1897 doi:10.1063/1.104004
Kawamura, Yuichi, Asai, Hiromitsu, Wakita, Koichi, Mikami, Osamu, Naganuma, Mitsuru (1989) Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1104
Kawamura, Yuichi, Asai, Hiromitsu, Naganuma, Mitsuru (1990) Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1052
Kagawa, Toshiaki, Kawamura, Yuichi, Iwamura, Hidetoshi (1993) Saturation of multiplication factor in InGaAsP/InAlAs superlattice avalanche photodiodes. Applied Physics Letters, 62 (10). 1122-1124 doi:10.1063/1.108762
Asai, Hiromitsu, Kawamura, Yuichi (1990) Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells. Applied Physics Letters, 56 (8). 746-748 doi:10.1063/1.102700
Asai, Hiromitsu, Kawamura, Yuichi (1990) Doping effects on intersubband absorption in InGaAs/InAlAs multiquantum wells. Applied Physics Letters, 56 (15). 1427-1429 doi:10.1063/1.102488
Asai, Hiromitsu, Kawamura, Yuichi (1990) Well‐width dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells. Applied Physics Letters, 56 (12). 1149-1151 doi:10.1063/1.102546
Kagawa, Toshiaki, Iwamura, Hidetoshi, Mikami, Osamu (1989) Dependence of the GaAs/AlGaAs superlattice ionization rate on Al content. Applied Physics Letters, 54 (1). 33-35 doi:10.1063/1.100825
Asai, Hiromitsu, Kawamura, Yuichi (1990) Temperature dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells. Journal of Applied Physics, 68 (11). 5890-5892 doi:10.1063/1.346936
Fukano, Hideki, Kawamura, Yuichi, Asai, Hiromitsu, Takanashi, Yoshifumi (1989) High Frequency Characteristics of InAlAs/InGaAs HBT's. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1737
Mitomi, Osamu, Kotaka, Isamu, Wakita, Koichi, Nojima, Shunji, Kawano, Kenji, Kawamura, Yuichi, Asai, Hiromitsu (1992) 40-GHz bandwidth InGaAs/InAlAs multiple quantum well optical intensity modulator. Applied Optics, 31. 2030pp. doi:10.1364/ao.31.002030
 
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