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Polman, A., Mous, D. J. W., Stolk, P. A., Sinke, W. C., Bulle‐Lieuwma, C. W. T., Vandenhoudt, D. E. W. (1989) Epitaxial explosive crystallization of amorphous silicon. Applied Physics Letters, 55 (11). 1097-1099 doi:10.1063/1.101668

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial explosive crystallization of amorphous silicon
JournalApplied Physics Letters
AuthorsPolman, A.Author
Mous, D. J. W.Author
Stolk, P. A.Author
Sinke, W. C.Author
Bulle‐Lieuwma, C. W. T.Author
Vandenhoudt, D. E. W.Author
Year1989 (September 11)Volume55
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.101668Search in ResearchGate
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Mindat Ref. ID8487790Long-form Identifiermindat:1:5:8487790:1
GUID0
Full ReferencePolman, A., Mous, D. J. W., Stolk, P. A., Sinke, W. C., Bulle‐Lieuwma, C. W. T., Vandenhoudt, D. E. W. (1989) Epitaxial explosive crystallization of amorphous silicon. Applied Physics Letters, 55 (11). 1097-1099 doi:10.1063/1.101668
Plain TextPolman, A., Mous, D. J. W., Stolk, P. A., Sinke, W. C., Bulle‐Lieuwma, C. W. T., Vandenhoudt, D. E. W. (1989) Epitaxial explosive crystallization of amorphous silicon. Applied Physics Letters, 55 (11). 1097-1099 doi:10.1063/1.101668
In(1989, September) Applied Physics Letters Vol. 55 (11) AIP Publishing

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Polman, A., Stolk, P. A., Mous, D. J. W., Sinke, W. C., Bulle‐Lieuwma, C. W. T., Vandenhoudt, D. E. W. (1990) Pulsed‐laser crystallization of amorphous silicon layers buried in a crystalline matrix. Journal of Applied Physics, 67 (9). 4024-4035 doi:10.1063/1.346076
Oostra, D. J., Vandenhoudt, D. E. W., Bulle‐Lieuwma, C. W. T., Naburgh, E. P. (1991) Ion‐beam synthesis of a Si/β‐FeSi2/Si heterostructure. Applied Physics Letters, 59 (14). 1737-1739 doi:10.1063/1.106235
Dekempeneer, E. H. A., Ottenheim, J. J. M., Zalm, P. C., Bulle‐Lieuwma, C. W. T., Vandenhoudt, D. E. W., Naburgh, E. P. (1991) Thin buried cobalt silicide layers in Si(100) by channeled implantations. Applied Physics Letters, 58 (19). 2102-2104 doi:10.1063/1.105000
Dekempeneer, E. H. A., Ottenheim, J. J. M., Vandenhoudt, D. W. E., Bulle‐Lieuwma, C. W. T., Lathouwers, E. G. C. (1991) Optimum implantation conditions for ion beam synthesis of buried cobalt silicide layers in Si(100). Applied Physics Letters, 59 (4). 467-469 doi:10.1063/1.105438
Oostra, D. J., Bulle‐Lieuwma, C. W. T., Vandenhoudt, D. E. W., Felten, F., Jans, J. C. (1993) β‐FeSi2in (111)Si and in (001) Si formed by ion‐beam synthesis. Journal of Applied Physics, 74 (7). 4347-4353 doi:10.1063/1.354401
Sinke, W.C., Polman, A., Roorda, S., Stolk, P.A. (1989) Explosive crystallization of amorphous silicon: triggering and propagation. Applied Surface Science, 43. 128-135 doi:10.1016/0169-4332(89)90201-8
Bulle‐Lieuwma, C. W. T., Van Ommen, A. H., Vandenhoudt, D. E. W., Ottenheim, J. J. M., de Jong, A. F. (1991) Microstructure of buried CoSi2 layers formed by high‐dose Co implantation into (100) and (111) Si substrates. Journal of Applied Physics, 70 (6). 3093-3108 doi:10.1063/1.349288
Bulle‐Lieuwma, C. W. T., Vandenhoudt, D. E. W., Henz, J., Onda, N., von Känel, H. (1993) Investigation of the defect structure of thin single‐crystalline CoSi2(B) films on Si(111) by transmission electron microscopy. Journal of Applied Physics, 73 (7). 3220-3236 doi:10.1063/1.352966
Stolk, P. A., Calcagnile, L., Roorda, S., Sinke, W. C., Berntsen, A. J. M., van der Weg, W. F. (1992) Defects in amorphous silicon probed by subpicosecond photocarrier dynamics. Applied Physics Letters, 60 (14). 1688-1690 doi:10.1063/1.107212
Polman, A., Roorda, S., Stolk, P.A., Sinke, W.C. (1991) Triggering explosive crystallization of amorphous silicon. Journal of Crystal Growth, 108 (1). 114-120 doi:10.1016/0022-0248(91)90359-d
Bulle-Lieuwma, C. W. T., de Jong, A. F., Vandenhoudt, D. E. W. (1991) Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation. Philosophical Magazine A, 64 (2). 255-280 doi:10.1080/01418619108221184
 
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