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Lau, K. Y., Xin, S., Wang, W. I., Bar‐Chaim, N., Mittelstein, M. (1989) Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers. Applied Physics Letters, 55 (12). 1173-1175 doi:10.1063/1.101688

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers
JournalApplied Physics Letters
AuthorsLau, K. Y.Author
Xin, S.Author
Wang, W. I.Author
Bar‐Chaim, N.Author
Mittelstein, M.Author
Year1989 (September 18)Volume55
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.101688Search in ResearchGate
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Mindat Ref. ID8487907Long-form Identifiermindat:1:5:8487907:9
GUID0
Full ReferenceLau, K. Y., Xin, S., Wang, W. I., Bar‐Chaim, N., Mittelstein, M. (1989) Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers. Applied Physics Letters, 55 (12). 1173-1175 doi:10.1063/1.101688
Plain TextLau, K. Y., Xin, S., Wang, W. I., Bar‐Chaim, N., Mittelstein, M. (1989) Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers. Applied Physics Letters, 55 (12). 1173-1175 doi:10.1063/1.101688
In(1989, September) Applied Physics Letters Vol. 55 (12) AIP Publishing

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Bar‐Chaim, Nadav, Lau, Kam Y., Mazed, M. A., Mittelstein, Michael, Oh, Se, Ungar, Jeffrey E., Ury, Israel (1990) Half‐ring geometry quantum well GaAlAs lasers. Applied Physics Letters, 57 (10). 966-967 doi:10.1063/1.103527
Larsson, Anders, Cody, Jeffrey, Lang, Robert J. (1989) Strained‐layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency. Applied Physics Letters, 55 (22). 2268-2270 doi:10.1063/1.102034
Moore, N., Lau, K. Y. (1989) Ultrahigh efficiency microwave signal transmission using tandem‐contact single quantum well GaAlAs lasers. Applied Physics Letters, 55 (10). 936-938 doi:10.1063/1.101729
Lau, K. Y., Ury, I., Bar‐Chaim, N., Harder, Ch., Yariv, A. (1983) Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers. Applied Physics Letters, 43 (4). 329-331 doi:10.1063/1.94344
Wu, T. C., Kan, S. C., Vassilovski, D., Lau, K. Y. (1993) Influence of separate‐confinement layer band structure on the transport‐limited modulation bandwidth in quantum well lasers. Applied Physics Letters, 63 (4). 441-443 doi:10.1063/1.110017
Lau, K. Y., Bar‐Chaim, N., Ury, I., Harder, Ch., Yariv, A. (1983) Direct amplitude modulation of short‐cavity GaAs lasers up toX‐band frequencies. Applied Physics Letters, 43 (1). 1-3 doi:10.1063/1.94153
Mannoh, M., Hoshina, J., Kamiyama, S., Ohta, H., Ban, Y., Ohnaka, K. (1993) High power and high‐temperature operation of GaInP/AlGaInP strained multiple quantum well lasers. Applied Physics Letters, 62 (11). 1173-1175 doi:10.1063/1.108776
Lau, K. Y., Bar‐Chaim, N., Ury, I., Yariv, A. (1984) 11‐GHz direct modulation bandwidth GaAlAs window laser on semi‐insulating substrate operating at room temperature. Applied Physics Letters, 45 (4). 316-318 doi:10.1063/1.95276
Sun, C.‐K., Choi, H. K., Wang, C. A., Fujimoto, J. G. (1993) Femtosecond gain dynamics in InGaAs/AlGaAs strained‐layer single‐quantum‐well diode lasers. Applied Physics Letters, 63 (1). 96-98 doi:10.1063/1.109709
Yamada, N., Harris, J. S. (1992) Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing. Applied Physics Letters, 60 (20). 2463-2465 doi:10.1063/1.106934
Liu, D. C., Lee, C. P., Tsai, C. M., Lei, T. F., Tsang, J. S., Chiang, W. H., Tu, Y. K. (1993) Role of cladding layer thicknesses on strained‐layer InGaAs/GaAs single and multiple quantum well lasers. Journal of Applied Physics, 73 (12). 8027-8034 doi:10.1063/1.353917
 
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