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Schloss, J. H., Eden, J. G. (1989) Excited‐state absorption in HgBr. Applied Physics Letters, 55 (13). 1282-1284 doi:10.1063/1.101632

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Reference TypeJournal (article/letter/editorial)
TitleExcited‐state absorption in HgBr
JournalApplied Physics Letters
AuthorsSchloss, J. H.Author
Eden, J. G.Author
Year1989 (September 25)Volume55
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.101632Search in ResearchGate
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Mindat Ref. ID8487947Long-form Identifiermindat:1:5:8487947:7
GUID0
Full ReferenceSchloss, J. H., Eden, J. G. (1989) Excited‐state absorption in HgBr. Applied Physics Letters, 55 (13). 1282-1284 doi:10.1063/1.101632
Plain TextSchloss, J. H., Eden, J. G. (1989) Excited‐state absorption in HgBr. Applied Physics Letters, 55 (13). 1282-1284 doi:10.1063/1.101632
In(1989, September) Applied Physics Letters Vol. 55 (13) AIP Publishing

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Eden, J. G., Waynant, R. W. (1979) HgBr and HgI B‐state quenching rate constants. Applied Physics Letters, 34 (5). 324-327 doi:10.1063/1.90791
Greene, D. P., Killeen, K. P., Eden, J. G. (1986) Excited state, charge transfer absorption spectrum of HgBr in the blue (λ∼447 nm). The Journal of Chemical Physics, 85 (6). 3188-3193 doi:10.1063/1.450985
Greene, D. P., Killeen, K. P., Eden, J. G. (1986) X2Σ→B2Σ absorption band of HgBr: Optically pumped 502‐nm laser. Applied Physics Letters, 48 (18). 1175-1177 doi:10.1063/1.96460
Jones, R. B., Schloss, J. H., Eden, J. G. (1992) Discharge‐excited free jet source of rare gas‐halide and oxide molecules. Journal of Applied Physics, 71 (4). 1674-1682 doi:10.1063/1.351197
Schloss, J. H., Tran, H. C., Eden, J. G. (1997) Photodissociation of Kr2F(4 2Γ) in the ultraviolet and near-infrared: Wavelength dependence of KrF (B 2Σ) yield. The Journal of Chemical Physics, 106 (13). 5423-5428 doi:10.1063/1.473567
Schloss, J. H., Jones, R. B., Eden, J. G. (1993) Photoassociation of Kr–F collision pairs in the ultraviolet. The Journal of Chemical Physics, 99 (9). 6483-6494 doi:10.1063/1.465840
Dischler, B., Fuchs, F., Kaufmann, U. (1986) Photoresponse of the EL2 absorption in undoped semi‐insulating GaAs. Applied Physics Letters, 48 (19). 1282-1284 doi:10.1063/1.97004
Burke, Hubert H., Herman, Irving P., Tavitian, Viken, Eden, J. Gary (1989) Laser photochemical deposition of germanium‐silicon alloy thin films. Applied Physics Letters, 55 (3). 253-255 doi:10.1063/1.102384
Kiely, C. J., Tavitian, V., Jones, C., Eden, J. G. (1989) NH3as a photosensitizer in the epitaxial growth of Ge on GaAs by laser photochemical vapor deposition. Applied Physics Letters, 55 (1). 65-67 doi:10.1063/1.101755
Oton, C. J., Loh, W. H., Kenyon, A. J. (2006) Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx. Applied Physics Letters, 89 (3). 31116pp. doi:10.1063/1.2227637
Hewitt, J. D., Houlahan, T. J., Gallagher, J. E., Carroll, D. L., Palla, A. D., Verdeyen, J. T., Perram, G. P., Eden, J. G. (2013) Role of excited state photoionization in the 852.1 nm Cs laser pumped by Cs-Ar photoassociation. Applied Physics Letters, 102 (11). 111104pp. doi:10.1063/1.4796040
 
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