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Mochizuki, Y., Mizuta, M., Fujieda, S., Matsumoto, Y. (1989) Charge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure. Applied Physics Letters, 55 (13). 1318-1320 doi:10.1063/1.101642

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Reference TypeJournal (article/letter/editorial)
TitleCharge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure
JournalApplied Physics Letters
AuthorsMochizuki, Y.Author
Mizuta, M.Author
Fujieda, S.Author
Matsumoto, Y.Author
Year1989 (September 25)Volume55
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.101642Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487967Long-form Identifiermindat:1:5:8487967:1
GUID0
Full ReferenceMochizuki, Y., Mizuta, M., Fujieda, S., Matsumoto, Y. (1989) Charge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure. Applied Physics Letters, 55 (13). 1318-1320 doi:10.1063/1.101642
Plain TextMochizuki, Y., Mizuta, M., Fujieda, S., Matsumoto, Y. (1989) Charge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure. Applied Physics Letters, 55 (13). 1318-1320 doi:10.1063/1.101642
In(1989, September) Applied Physics Letters Vol. 55 (13) AIP Publishing

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Mochizuki, Y., Mizuta, M., Fujieda, S., Matsumoto, Y. (1990) Characterization of donorlike interface states which play a dominant role in the surface potential pinning in AlN/GaAs interfaces. Journal of Applied Physics, 67 (5). 2466-2474 doi:10.1063/1.345496
Fujieda, S., Akimoto, K., Hirosawa, I., Mochizuki, Y., Mizuki, J., Matsumoto, Y., Matsui, J. (1990) Electrical properties and structures of the MOCVD-AIN/GaAs interface. Applied Surface Science, 41. 516-521 doi:10.1016/0169-4332(89)90113-x
Chou, T. Y., Lin, M. S. (1986) Interface properties of plasma‐enhanced chemical vapor deposited SiOxNy/n‐GaAs metal‐insulator‐semiconductor system. Journal of Applied Physics, 59 (11). 3778-3782 doi:10.1063/1.336765
Liu, J. W., Liao, M. Y., Imura, M., Matsumoto, T., Shibata, N., Ikuhara, Y., Koide, Y. (2015) Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors. Journal of Applied Physics, 118 (11). 115704pp. doi:10.1063/1.4930294
Baunach, R., Spitzer, A. (1988) Charge trapping characteristics of multilayer dielectrics in metal‐insulator semiconductor structures. Journal of Applied Physics, 64 (9). 4567-4573 doi:10.1063/1.341259
Fujieda, Shinji, Mizuta, Masashi, Matsumoto, Yoshishige (1988) Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l296
Chen, T. P., Huang, J. Y., Tse, M. S., Tan, S. S., Ang, C. H., Fung, S. (2003) Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal–oxide–semiconductor transistors. Applied Physics Letters, 82 (18). 3113-3115 doi:10.1063/1.1572471
Mizuta, Masashi, Fujieda, Shinji, Matsumoto, Yoshishige, Kawamura, Tsutomu (1986) Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l945
Sakashita, M., Zaima, S., Yasuda, Y. (1990) Charge trapping and interface state generation in metal‐oxide‐semiconductor capacitors due to Fowler–Nordheim tunneling injection at low temperatures. Journal of Applied Physics, 67 (11). 6903-6907 doi:10.1063/1.345082
Tseng, T. Y., Lee, S. Y. (2003) Improvement in retention time of metal–ferroelectric–metal– insulator–semiconductor structures using MgO doped Ba0.7Sr0.3TiO3 insulator layer. Applied Physics Letters, 83 (5). 981-983 doi:10.1063/1.1597412
Freeouf, J. L., Woodall, J. M., Brillson, L. J., Viturro, R. E. (1990) Metal/(100) GaAs interface: Case for a metal‐insulator‐semiconductor‐like structure. Applied Physics Letters, 56 (1). 69-71 doi:10.1063/1.102654
 
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