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Oostra, Doeke J., Smilgys, Russell V., Leone, Stephen R. (1989) Initial stages of heteroepitaxial growth of InAs on Si (100). Applied Physics Letters, 55 (13). 1333-1335 doi:10.1063/1.101647

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Reference TypeJournal (article/letter/editorial)
TitleInitial stages of heteroepitaxial growth of InAs on Si (100)
JournalApplied Physics Letters
AuthorsOostra, Doeke J.Author
Smilgys, Russell V.Author
Leone, Stephen R.Author
Year1989 (September 25)Volume55
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.101647Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487977Long-form Identifiermindat:1:5:8487977:8
GUID0
Full ReferenceOostra, Doeke J., Smilgys, Russell V., Leone, Stephen R. (1989) Initial stages of heteroepitaxial growth of InAs on Si (100). Applied Physics Letters, 55 (13). 1333-1335 doi:10.1063/1.101647
Plain TextOostra, Doeke J., Smilgys, Russell V., Leone, Stephen R. (1989) Initial stages of heteroepitaxial growth of InAs on Si (100). Applied Physics Letters, 55 (13). 1333-1335 doi:10.1063/1.101647
In(1989, September) Applied Physics Letters Vol. 55 (13) AIP Publishing

See Also

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Oostra, Doeke J., Smilgys, Russell V., Leone, Stephen R. (1990) Spin-orbit state specific laser probing of the desorption kinetics and islanding behavior of In on Si(100). Surface Science, 226 (3). 226-236 doi:10.1016/0039-6028(90)90488-t
Alstrin, April L., Smilgys, Russell V., Strupp, Paul G., Leone, Stephen R. (1992) Vibrational distributions of As2 in the cracking of As4 on Si(100) and Si(111). The Journal of Chemical Physics, 97 (9). 6864-6870 doi:10.1063/1.463639
Bourguignon, Bernard, Smilgys, Russell V, Leone, Stephen R (1988) AES and LEED studies correlating desorption energies with surface structures and coverages for Ga on Si(100). Surface Science, 204 (3). 473-484 doi:10.1016/0039-6028(88)90227-0
Choi, C.‐H., Barnett, S. A. (1989) Nucleation and epitaxial growth of InAs on Si (100) by ion‐assisted deposition. Applied Physics Letters, 55 (22). 2319-2321 doi:10.1063/1.102049
Lee, M. K., Yeh, M. Y., Chang, C. C. (1989) Heteroepitaxial growth of ZnSe on (100) Si by low‐pressure organometallic chemical vapor deposition. Applied Physics Letters, 55 (18). 1850-1852 doi:10.1063/1.102185
Fotiadis, L., Kaplan, R. (1989) Initial stages of growth of GaAs on silicon (211) substrates by migration‐enhanced molecular beam epitaxy. Applied Physics Letters, 55 (24). 2538-2540 doi:10.1063/1.101974
Lyubinetsky, I., El-Azab, A., Lea, A. S., Thevuthasan, S., Baer, D. R. (2004) Initial stages of oxide nanodot heteroepitaxial growth: Cu[sub 2]O on SrTiO[sub 3](100). Applied Physics Letters, 85 (19). 4481pp. doi:10.1063/1.1819509
Fukumoto, Hirofumi, Imura, Takeshi, Osaka, Yukio (1989) Heteroepitaxial growth of Y2O3films on silicon. Applied Physics Letters, 55 (4). 360-361 doi:10.1063/1.102420
Lee, Myung‐Bok, Kawasaki, Masashi, Yoshimoto, Mamoru, Koinuma, Hideomi (1995) Heteroepitaxial growth of BaTiO3 films on Si by pulsed laser deposition. Applied Physics Letters, 66 (11). 1331-1333 doi:10.1063/1.113232
Eres, Djula, Lowndes, Douglas H., Tischler, J. Z., Sharp, J. W., Geohegan, D. B., Pennycook, S. J. (1989) Heteroepitaxial growth of Ge films on (100) GaAs by pyrolysis of digermane. Applied Physics Letters, 55 (9). 858-860 doi:10.1063/1.101777
Posthill, J. B. (1989) Erratum: Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates [Appl. Phys. Lett.54, 1687 (1989)]. Applied Physics Letters, 55 (4). 411 doi:10.1063/1.102375
 
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