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Lu, S. S., Lee, K., Nathan, M. I., Heiblum, M., Wright, S. L. (1989) Uniaxial stress dependence of current‐voltage characteristics in GaAs‐AlxGa1−xAs‐GaAs heterojunction barriers. Applied Physics Letters, 55 (13). 1336-1338 doi:10.1063/1.101648

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Reference TypeJournal (article/letter/editorial)
TitleUniaxial stress dependence of current‐voltage characteristics in GaAs‐AlxGa1−xAs‐GaAs heterojunction barriers
JournalApplied Physics Letters
AuthorsLu, S. S.Author
Lee, K.Author
Nathan, M. I.Author
Heiblum, M.Author
Wright, S. L.Author
Year1989 (September 25)Volume55
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.101648Search in ResearchGate
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Mindat Ref. ID8487979Long-form Identifiermindat:1:5:8487979:6
GUID0
Full ReferenceLu, S. S., Lee, K., Nathan, M. I., Heiblum, M., Wright, S. L. (1989) Uniaxial stress dependence of current‐voltage characteristics in GaAs‐AlxGa1−xAs‐GaAs heterojunction barriers. Applied Physics Letters, 55 (13). 1336-1338 doi:10.1063/1.101648
Plain TextLu, S. S., Lee, K., Nathan, M. I., Heiblum, M., Wright, S. L. (1989) Uniaxial stress dependence of current‐voltage characteristics in GaAs‐AlxGa1−xAs‐GaAs heterojunction barriers. Applied Physics Letters, 55 (13). 1336-1338 doi:10.1063/1.101648
In(1989, September) Applied Physics Letters Vol. 55 (13) AIP Publishing

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Lu, S. S., Lee, K. R., Lee, K. H., Nathan, M. I., Heiblum, M., Wright, S. L. (1990) Theoretical and experimental study of the longitudinal uniaxial stress dependence ofI‐Vcharacteristics in GaAs‐AlxGa1−xAs‐GaAs heterojunction barriers. Journal of Applied Physics, 67 (10). 6360-6367 doi:10.1063/1.345157
Lu, S. S., Nathan, M. I., Meng, C. C. (1991) Uniaxial stress dependence of the current‐voltage characteristics ofn‐type AlAs/GaAs/AlAs tunnel diodes at 77 K. Journal of Applied Physics, 69 (1). 525-527 doi:10.1063/1.347699
Lu, S.S., Lee, K.R., Lee, K.H., Nathan, M.I., Heiblum, M., Wright, S.L. (1990) Excess current in n+GaAsAlxGa1−xAsnGaAs heterojunctions. Surface Science, 228 (1). 430-432 doi:10.1016/0039-6028(90)90344-8
Lee, S. C., Pearson, G. L. (1981) Dark current reduction in AlxGa1−xAs‐GaAs heterojunction diodes. Journal of Applied Physics, 52 (1). 275-278 doi:10.1063/1.328489
Lee, S. C., Pearson, G. L. (1981) Current‐voltage characteristics of AlxGa1−xAs Schottky barriers andp‐njunctions. Journal of Applied Physics, 52 (8). 5202-5206 doi:10.1063/1.329423
Beyzavi, K., Lee, K., Kim, D. M., Nathan, M. I., Wrenner, K., Wright, S. L. (1991) Temperature dependence of minority‐carrier mobility and recombination time in p‐type GaAs. Applied Physics Letters, 58 (12). 1268-1270 doi:10.1063/1.104332
Li, Z.‐M., McAlister, S. P. (1989) Conformal mapping and the current distributions in AlxGa1−xAs/GaAs heterostructures. Journal of Applied Physics, 66 (2). 680-685 doi:10.1063/1.343537
Liu, Y., Rang, Z. L., Fung, A. K., Cai, C., Ruden, P. P., Nathan, M. I., Shtrikman, H. (2001) Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction. Applied Physics Letters, 79 (27). 4586-4588 doi:10.1063/1.1427753
Lu, S. S., Meng, C. C., Williamson, F., Nathan, M. I. (1991) Uniaxial stress effects on the AlAs/GaAs double‐barrier heterostructures. Journal of Applied Physics, 69 (12). 8241-8246 doi:10.1063/1.347430
Nathan, M. I., Dumke, W. P., Wrenner, K., Tiwari, S., Wright, S. L., Jenkins, K. A. (1988) Electron mobility in p‐type GaAs. Applied Physics Letters, 52 (8). 654-656 doi:10.1063/1.99395
Theis, T. N., Wright, S. L. (1986) Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions. Applied Physics Letters, 48 (20). 1374-1376 doi:10.1063/1.97028
 
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