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Niki, S., Lin, C. L., Chang, W. S. C., Wieder, H. H. (1989) Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells. Applied Physics Letters, 55 (13). 1339-1341 doi:10.1063/1.101649

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Reference TypeJournal (article/letter/editorial)
TitleBand‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells
JournalApplied Physics Letters
AuthorsNiki, S.Author
Lin, C. L.Author
Chang, W. S. C.Author
Wieder, H. H.Author
Year1989 (September 25)Volume55
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.101649Search in ResearchGate
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Mindat Ref. ID8487981Long-form Identifiermindat:1:5:8487981:1
GUID0
Full ReferenceNiki, S., Lin, C. L., Chang, W. S. C., Wieder, H. H. (1989) Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells. Applied Physics Letters, 55 (13). 1339-1341 doi:10.1063/1.101649
Plain TextNiki, S., Lin, C. L., Chang, W. S. C., Wieder, H. H. (1989) Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells. Applied Physics Letters, 55 (13). 1339-1341 doi:10.1063/1.101649
In(1989, September) Applied Physics Letters Vol. 55 (13) AIP Publishing

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Niki, S., Kellner, A. L., Lin, S. C., Cheng, A., Williams, A. R., Chang, W. S. C., Wieder, H. H. (1990) Electroabsorption effects in InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 56 (5). 475-477 doi:10.1063/1.102770
Niki, Shigeru, Cheng, An-nien, Chang, Jessica C. P., Chang, William S. C., Wieder, Harry H. (1990) Highly-Strained InxGa1-xAs/GaAs Multiple Quantum Wells for Electroabsorption Modulation. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1833
Hrivnák, ??. (1991) Conduction-Band Discontinuities of Strained- and Unstrained-Layer InxGa1−xAs/GaAs and InxGa1−xAs/InP Heterojunctions and Quantum Wells. physica status solidi (a), 124 (2). doi:10.1002/pssa.2211240233
Lee, P. Z., Lin, C. L., Ho, J. C., Meiners, L. G., Wieder, H. H. (1990) Conduction‐band discontinuities of InxAl1−xAs/In0.53Ga0.47Asn‐isotype heterojunctions. Journal of Applied Physics, 67 (9). 4377-4379 doi:10.1063/1.344908
Huang, K. F., Tai, K., Chu, S. N. G., Cho, A. Y. (1989) Optical studies of InxGa1−xAs/GaAs strained‐layer quantum wells. Applied Physics Letters, 54 (20). 2026-2028 doi:10.1063/1.101181
Van Eck, T. E., Chu, P., Chang, W. S. C., Wieder, H. H. (1986) Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure. Applied Physics Letters, 49 (3). 135-136 doi:10.1063/1.97202
Hou, H. Q., Cheng, A. N., Wieder, H. H., Chang, W. S. C., Tu, C. W. (1993) Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators. Applied Physics Letters, 63 (13). 1833-1835 doi:10.1063/1.110806
Niki, S., Chang, W.S.C., Wieder, H.H., Van Eck, T.E. (1991) Molecular beam epitaxial growth and properties of highly strained InxGa1−xAs/GaAs multiple quantum wells. Journal of Crystal Growth, 111 (1). 419-423 doi:10.1016/0022-0248(91)91012-y
Wu, Chuanyong, Lao, Pudong, Shen, S. C. (1991) Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 58 (14). 1491-1493 doi:10.1063/1.105181
Melman, P., Elman, B., Jagannath, C., Koteles, Emil S., Silletti, A., Dugger, D. (1989) InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperature. Applied Physics Letters, 55 (14). 1436-1438 doi:10.1063/1.101579
Chu, P., Lin, C. L., Wieder, H. H. (1988) Schottky barrier height of InxAl1−xAs epitaxial and strained layers. Applied Physics Letters, 53 (24). 2423-2425 doi:10.1063/1.100228
 
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