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Sano, Nobuyuki, Aoki, Takahiro, Yoshii, Akira (1989) Soft and hard ionization thresholds in Si and GaAs. Applied Physics Letters, 55 (14). 1418-1420 doi:10.1063/1.101612

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Reference TypeJournal (article/letter/editorial)
TitleSoft and hard ionization thresholds in Si and GaAs
JournalApplied Physics Letters
AuthorsSano, NobuyukiAuthor
Aoki, TakahiroAuthor
Yoshii, AkiraAuthor
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101612Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8488051Long-form Identifiermindat:1:5:8488051:6
GUID0
Full ReferenceSano, Nobuyuki, Aoki, Takahiro, Yoshii, Akira (1989) Soft and hard ionization thresholds in Si and GaAs. Applied Physics Letters, 55 (14). 1418-1420 doi:10.1063/1.101612
Plain TextSano, Nobuyuki, Aoki, Takahiro, Yoshii, Akira (1989) Soft and hard ionization thresholds in Si and GaAs. Applied Physics Letters, 55 (14). 1418-1420 doi:10.1063/1.101612
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Sano, Nobuyuki, Yoshii, Akira (1994) Impact ionization rate near thresholds in Si. Journal of Applied Physics, 75 (10). 5102-5105 doi:10.1063/1.355754
Sano, Nobuyuki, Aoki, Takahiro, Tomizawa, Masaaki, Yoshii, Akira (1990) Electron transport and impact ionization in Si. Physical Review B, 41 (17) 12122-12128 doi:10.1103/physrevb.41.12122
Sano, Nobuyuki, Tomizawa, Masaaki, Yoshii, Akira (1990) Monte Carlo analysis of ionization threshold in Si. Applied Physics Letters, 56 (7). 653-655 doi:10.1063/1.102727
Sano, Nobuyuki, Yoshii, Akira (1995) Impact‐ionization model consistent with the band structure of semiconductors. Journal of Applied Physics, 77 (5). 2020-2025 doi:10.1063/1.358839
Sano, Nobuyuki, Tomizawa, Masaaki, Yoshii, Akira (1991) Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon. Japanese Journal of Applied Physics, 30. 3662-36665 doi:10.1143/jjap.30.3662
Sano, Nobuyuki, Yoshii, Akira (1991) Direct comparison of quantum and classical descriptions of high‐field carrier transport in semiconductors. Journal of Applied Physics, 70 (6). 3127-3130 doi:10.1063/1.349291
Bude, Jeff, Sano, Nobuyuki, Yoshii, Akira (1992) Hot-carrier luminescence in Si. Physical Review B, 45 (11) 5848-5856 doi:10.1103/physrevb.45.5848
Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi (1989) High‐resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams. Applied Physics Letters, 55 (24). 2509-2511 doi:10.1063/1.102013
Sano, Nobuyuki, Yoshii, Akira (1992) Impact-ionization theory consistent with a realistic band structure of silicon. Physical Review B, 45 (8) 4171-4180 doi:10.1103/physrevb.45.4171
García, N., Escapa, L. (1989) Elastic oscillatory resistances of small contacts. Applied Physics Letters, 54 (15). 1418-1420 doi:10.1063/1.100685
Lanzillotto, A‐M., Santos, M., Shayegan, M. (1989) Secondary‐ion mass spectrometry study of the migration of Si in planar‐doped GaAs and Al0.25Ga0.75As. Applied Physics Letters, 55 (14). 1445-1447 doi:10.1063/1.101582
 
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