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Suñé, J., Farrés, E., Placencia, I., Barniol, N., Martín, F., Aymerich, X. (1989) Nondestructive multiple breakdown events in very thin SiO2films. Applied Physics Letters, 55 (2). 128-130 doi:10.1063/1.102396

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Reference TypeJournal (article/letter/editorial)
TitleNondestructive multiple breakdown events in very thin SiO2films
JournalApplied Physics Letters
AuthorsSuñé, J.Author
Farrés, E.Author
Placencia, I.Author
Barniol, N.Author
Martín, F.Author
Aymerich, X.Author
Year1989 (July 10)Volume55
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.102396Search in ResearchGate
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Mindat Ref. ID8488502Long-form Identifiermindat:1:5:8488502:5
GUID0
Full ReferenceSuñé, J., Farrés, E., Placencia, I., Barniol, N., Martín, F., Aymerich, X. (1989) Nondestructive multiple breakdown events in very thin SiO2films. Applied Physics Letters, 55 (2). 128-130 doi:10.1063/1.102396
Plain TextSuñé, J., Farrés, E., Placencia, I., Barniol, N., Martín, F., Aymerich, X. (1989) Nondestructive multiple breakdown events in very thin SiO2films. Applied Physics Letters, 55 (2). 128-130 doi:10.1063/1.102396
In(1989, July) Applied Physics Letters Vol. 55 (2) AIP Publishing

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Suñé, J., Placencia, I., Barniol, N., Farrés, E., Aymerich, X. (1989) Degradation and Breakdown of Gate Oxides in VLSI Devices. physica status solidi (a), 111 (2). 675-685 doi:10.1002/pssa.2211110235
Farrés, E., Suñé, J., Placencia, I., Barniol, N., Aymerich, X. (1989) The Thermal Growth of Very Thin SiO2 Films A Diffusion-Controlled Process. physica status solidi (a), 114 (1). 167-175 doi:10.1002/pssa.2211140114
Suñé, J., Placencia, I., Barniol, N., Farrés, E., Aymerich, X. (1989) On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures. Surface Science Letters, 208 (3). doi:10.1016/0167-2584(89)90578-1
Farrés, E., Suñé, J., Placencia, I., Barniol, N., Aymerich, X. (1989) SiSiO2 interfacial atomic scale roughness caused by inhomogeneous thermal oxidation. physica status solidi (a), 113 (1). 83-96 doi:10.1002/pssa.2211130110
Suñé, J., Placencia, I., Barniol, N., Farrés, E., Aymerich, X. (1989) On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures. Surface Science, 208 (3). 463-472 doi:10.1016/0039-6028(89)90013-7
Miranda, E., Suñé, J., Rodríguez, R., Nafría, M., Aymerich, X. (1998) Soft breakdown fluctuation events in ultrathin SiO2 layers. Applied Physics Letters, 73 (4). 490-492 doi:10.1063/1.121910
Suñéa, J., Placencia, I., Farréas, E., Barniol, N., Aymerich, X. (1988) On the SiSiO2 interface roughness in VLSIMOS structures. physica status solidi (a), 109 (2). 479-491 doi:10.1002/pssa.2211090214
Suñé, J., Miranda, E., Nafría, M., Aymerich, X. (1999) Modeling the breakdown spots in silicon dioxide films as point contacts. Applied Physics Letters, 75 (7). 959-961 doi:10.1063/1.124566
Oriols, X., Suñé, J., Martín, F., Aymerich, X. (1995) Stationary modeling of two‐dimensional states in resonant tunneling devices. Journal of Applied Physics, 78 (3). 2135-2137 doi:10.1063/1.360196
Suñé, J., Placencia, Y., Campabadal, F., Aymerich, X. (1987) Characterization of the metal-SiO2-Si interface roughness by electrical methods. Surface Science Letters, 189. doi:10.1016/0167-2584(87)90463-4
Farres, E, Nafria, M, Sune, J, Aymerich, X (1991) The statistical distribution of breakdown from multiple breakdown events in one sample. Journal of Physics D: Applied Physics, 24. 407-414 doi:10.1088/0022-3727/24/3/026
 
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