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Vuillaume, D., Bouchakour, R., Jourdain, M., Bourgoin, J. C. (1989) Capture cross section of Si‐SiO2interface states generated during electron injection. Applied Physics Letters, 55 (2). 153-155 doi:10.1063/1.102397

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Reference TypeJournal (article/letter/editorial)
TitleCapture cross section of Si‐SiO2interface states generated during electron injection
JournalApplied Physics Letters
AuthorsVuillaume, D.Author
Bouchakour, R.Author
Jourdain, M.Author
Bourgoin, J. C.Author
Year1989 (July 10)Volume55
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.102397Search in ResearchGate
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Mindat Ref. ID8488503Long-form Identifiermindat:1:5:8488503:4
GUID0
Full ReferenceVuillaume, D., Bouchakour, R., Jourdain, M., Bourgoin, J. C. (1989) Capture cross section of Si‐SiO2interface states generated during electron injection. Applied Physics Letters, 55 (2). 153-155 doi:10.1063/1.102397
Plain TextVuillaume, D., Bouchakour, R., Jourdain, M., Bourgoin, J. C. (1989) Capture cross section of Si‐SiO2interface states generated during electron injection. Applied Physics Letters, 55 (2). 153-155 doi:10.1063/1.102397
In(1989, July) Applied Physics Letters Vol. 55 (2) AIP Publishing

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Vuillaume, D., Bourgoin, J. C. (1985) Characterization of Si‐SiO2interface states: Comparison between transient capacitance and conductance techniques. Journal of Applied Physics, 58 (5). 2077-2079 doi:10.1063/1.335969
Vuillaume, Dominique, Goguenheim, Didier, Bourgoin, Jacques C. (1991) Nature of the defects generated by electric field stress at the Si‐SiO2interface. Applied Physics Letters, 58 (5). 490-492 doi:10.1063/1.104617
Vuillaume, Dominique, Mir, Abdellah, Bouchakour, Rachid, Jourdain, Marc, El‐Hdiy, Abdelillah, Salace, Guy (1993) Generation of Si–SiO2interface states by high electric field stress from low (100 K) to high (450 K) temperatures. Journal of Applied Physics, 73 (1). 277-288 doi:10.1063/1.353901
Eades, Wendell D., Swanson, Richard M. (1984) Determination of the capture cross section and degeneracy factor of Si‐SiO2interface states. Applied Physics Letters, 44 (10). 988-990 doi:10.1063/1.94622
Bourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1989) Response to ‘‘Comment on ‘Physical meaning of electron capture kinetics onDXcenters’ ’’ [Appl. Phys. Lett.55, 804 (1989)]. Applied Physics Letters, 55 (8). 805-806 doi:10.1063/1.101766
Mir, Abdellah, Vuillaume, Dominique (1993) Positive charge and interface state creation at the Si‐SiO2interface during low‐fluence and high‐field electron injections. Applied Physics Letters, 62 (10). 1125-1127 doi:10.1063/1.108763
Zaidi, M. A., Maaref, H., Bourgoin, J. C. (1992) Minority carrier capture cross section of the EL2 defect in GaAs. Applied Physics Letters, 61 (20). 2452-2454 doi:10.1063/1.108149
Vuillaume, D., Lannoo, M., Bourgoin, J. C., Rosencher, E. (1989) Temperature formation of the inversion layer in metal‐oxide‐semiconductor structures: Theoretical model and application to the determination of minority‐capture cross sections of the gold acceptor level in silicon. Journal of Applied Physics, 66 (12). 5920-5929 doi:10.1063/1.343617
Stievenard, D., Bourgoin, J. C., Lannoo, M. (1984) An easy method to determine carrier‐capture cross sections: Application to GaAs. Journal of Applied Physics, 55 (6). 1477-1481 doi:10.1063/1.333404
Stievenard, D., Bourgoin, J. C. (1986) Evaluation of a defect capture cross section for minority carriers: Application to GaAs. Journal of Applied Physics, 59 (3). 808-812 doi:10.1063/1.336602
Cobden, D. H., Uren, M. J., Kirton, M. J. (1990) Entropy measurements on slow Si/SiO2interface states. Applied Physics Letters, 56 (13). 1245-1247 doi:10.1063/1.102527
 
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