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Loualiche, S., Ginudi, A., Le Corre, A., Lecrosnier, D., Vaudry, C., Henry, L., Guillemot, C. (1989) Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP. Applied Physics Letters, 55 (20). 2099-2101 doi:10.1063/1.102075

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Reference TypeJournal (article/letter/editorial)
TitlePseudomorphic GaInP Schottky diode and high electron mobility transistor on InP
JournalApplied Physics Letters
AuthorsLoualiche, S.Author
Ginudi, A.Author
Le Corre, A.Author
Lecrosnier, D.Author
Vaudry, C.Author
Henry, L.Author
Guillemot, C.Author
Year1989 (November 13)Volume55
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.102075Search in ResearchGate
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Mindat Ref. ID8488521Long-form Identifiermindat:1:5:8488521:0
GUID0
Full ReferenceLoualiche, S., Ginudi, A., Le Corre, A., Lecrosnier, D., Vaudry, C., Henry, L., Guillemot, C. (1989) Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP. Applied Physics Letters, 55 (20). 2099-2101 doi:10.1063/1.102075
Plain TextLoualiche, S., Ginudi, A., Le Corre, A., Lecrosnier, D., Vaudry, C., Henry, L., Guillemot, C. (1989) Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP. Applied Physics Letters, 55 (20). 2099-2101 doi:10.1063/1.102075
In(1989, November) Applied Physics Letters Vol. 55 (20) AIP Publishing

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Loualiche, S., Ginoudi, A., L’Haridon, H., Salvi, M., Le Corre, A., Lecrosnier, D., Favennec, P. N. (1989) Schottky diode and field‐effect transistor on InP. Applied Physics Letters, 54 (13). 1238-1240 doi:10.1063/1.100727
Loualiche, S., L’Haridon, H., Le Corre, A., Lecrosnier, D., Salvi, M., Favennec, P. N. (1988) Schottky and field‐effect transistor fabrication on InP and GaInAs. Applied Physics Letters, 52 (7). 540-542 doi:10.1063/1.99410
Loualiche, S., Le Corre, A., Salaun, S., Caulet, J., Lambert, B., Gauneau, M., Lecrosnier, D., Deveaud, B. (1991) GaPSb: A new ternary material for Schottky diode fabrication on InP. Applied Physics Letters, 59 (4). 423-424 doi:10.1063/1.105450
Loualiche, S., Gauneau, A., Le Corre, A., Lecrosnier, D., L’Haridon, H. (1987) Residual defect center in GaInAs/InP films grown by molecular beam epitaxy. Applied Physics Letters, 51 (17). 1361-1363 doi:10.1063/1.98679
Le Corre, A., Caulet, J., Gauneau, M., Loualiche, S., L’Haridon, H., Lecrosnier, D., Roizes, A., David, J. P. (1987) Influence of oxygen incorporation on beryllium‐doped InGaAs grown by molecular beam epitaxy. Applied Physics Letters, 51 (20). 1597-1599 doi:10.1063/1.98566
Streit, D. C., Jones, W. L., Sadwick, L. P., Kim, C. W., Hwu, R. J. (1991) Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures. Applied Physics Letters, 58 (20). 2273-2275 doi:10.1063/1.104897
Caroff, P., Paranthoen, C., Platz, C., Dehaese, O., Folliot, H., Bertru, N., Labbé, C., Piron, R., Homeyer, E., Le Corre, A., Loualiche, S. (2005) High-gain and low-threshold InAs quantum-dot lasers on InP. Applied Physics Letters, 87 (24). 243107pp. doi:10.1063/1.2146063
Cornet, C., LabbĂ©, C., Folliot, H., Caroff, P., Levallois, C., Dehaese, O., Even, J., Le Corre, A., Loualiche, S. (2006) Time-resolved pump probe of 1.55ÎŒm InAs∕InP quantum dots under high resonant excitation. Applied Physics Letters, 88 (17). 171502pp. doi:10.1063/1.2199454
Kim, D. M. (2001) Photovoltaic effects on pinch-off voltage and open-circuit voltage in high-electron-mobility-transistor and Schottky-diode configurations. Applied Physics Letters, 78 (11). 1553-1555 doi:10.1063/1.1355295
Stutz, C. E., Jogai, B., Look, D. C., Ballingall, J. M., Rogers, T. J. (1994) Electrochemical capacitance‐voltage analysis of delta‐doped pseudomorphic high electron mobility transistor material. Applied Physics Letters, 64 (20). 2703-2705 doi:10.1063/1.111471
Paranthoen, C., Bertru, N., Dehaese, O., Le Corre, A., Loualiche, S., Lambert, B., Patriarche, G. (2001) Height dispersion control of InAs/InP quantum dots emitting at 1.55 ÎŒm. Applied Physics Letters, 78 (12). 1751-1753 doi:10.1063/1.1356449
 
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