Galtier, P., Pocholle, J. P., Charasse, M. N., de Cremoux, B., Hirtz, J. P., Groussin, B., Benyattou, T., Guillot, G. (1989) 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy. Applied Physics Letters, 55 (20). 2105-2107 doi:10.1063/1.102077
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy | ||
| Journal | Applied Physics Letters | ||
| Authors | Galtier, P. | Author | |
| Pocholle, J. P. | Author | ||
| Charasse, M. N. | Author | ||
| de Cremoux, B. | Author | ||
| Hirtz, J. P. | Author | ||
| Groussin, B. | Author | ||
| Benyattou, T. | Author | ||
| Guillot, G. | Author | ||
| Year | 1989 (November 13) | Volume | 55 |
| Issue | 20 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.102077Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8488527 | Long-form Identifier | mindat:1:5:8488527:4 |
| GUID | 0 | ||
| Full Reference | Galtier, P., Pocholle, J. P., Charasse, M. N., de Cremoux, B., Hirtz, J. P., Groussin, B., Benyattou, T., Guillot, G. (1989) 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy. Applied Physics Letters, 55 (20). 2105-2107 doi:10.1063/1.102077 | ||
| Plain Text | Galtier, P., Pocholle, J. P., Charasse, M. N., de Cremoux, B., Hirtz, J. P., Groussin, B., Benyattou, T., Guillot, G. (1989) 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy. Applied Physics Letters, 55 (20). 2105-2107 doi:10.1063/1.102077 | ||
| In | (1989, November) Applied Physics Letters Vol. 55 (20) AIP Publishing | ||
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