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Beaudoin, M., Arsenault, C. J., Izquierdo, R., Meunier, M. (1989) Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy. Applied Physics Letters, 55 (25). 2640-2642 doi:10.1063/1.102299

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Reference TypeJournal (article/letter/editorial)
TitleInterface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy
JournalApplied Physics Letters
AuthorsBeaudoin, M.Author
Arsenault, C. J.Author
Izquierdo, R.Author
Meunier, M.Author
Year1989 (December 18)Volume55
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.102299Search in ResearchGate
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Mindat Ref. ID8488922Long-form Identifiermindat:1:5:8488922:5
GUID0
Full ReferenceBeaudoin, M., Arsenault, C. J., Izquierdo, R., Meunier, M. (1989) Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy. Applied Physics Letters, 55 (25). 2640-2642 doi:10.1063/1.102299
Plain TextBeaudoin, M., Arsenault, C. J., Izquierdo, R., Meunier, M. (1989) Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy. Applied Physics Letters, 55 (25). 2640-2642 doi:10.1063/1.102299
In(1989, December) Applied Physics Letters Vol. 55 (25) AIP Publishing

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Street, R. A., Thompson, M. J. (1984) Electronic states at the hydrogenated amorphous silicon/silcon nitride interface. Applied Physics Letters, 45 (7). 769-771 doi:10.1063/1.95398
Lehner, A., Steinhoff, G., Brandt, M. S., Eickhoff, M., Stutzmann, M. (2003) Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study. Journal of Applied Physics, 94 (4). 2289-2294 doi:10.1063/1.1593223
Uwasawa, K., Ishihara, F., Matsumoto, S. (1992) X‐ray photoelectron spectroscopy analysis of photostimulated chemical vapor deposition hydrogenated amorphous silicon/amorphous aluminum oxide. Applied Physics Letters, 60 (10). 1208-1210 doi:10.1063/1.107407
Hattori, R., Shirafuji, J. (1989) Longitudinal electron drift mobility of hydrogenated amorphous silicon/silicon nitride multilayer structures revealed by time‐of‐flight measurements. Applied Physics Letters, 54 (12). 1118-1120 doi:10.1063/1.101478
Thomas, J. H., Catalano, A. (1983) Auger electron and x‐ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon‐tin oxide interface: Evidence of a plasma‐induced reaction. Applied Physics Letters, 43 (1). 101-102 doi:10.1063/1.94143
Essick, John M., Cohen, J. David (1989) Band offsets and deep defect distribution in hydrogenated amorphous silicon‐crystalline silicon heterostructures. Applied Physics Letters, 55 (12). 1232-1234 doi:10.1063/1.101664
Park, H. R., Liu, J. Z., Wagner, S. (1989) Saturation of the light‐induced defect density in hydrogenated amorphous silicon. Applied Physics Letters, 55 (25). 2658-2660 doi:10.1063/1.101965
Chen, Guanghua, Sun, Guosheng, Zhang, Fangqing (1989) Characteristics of electron spin resonance in hydrogenated amorphous silicon‐carbon/hydrogenated amorphous silicon heterojunctions. Applied Physics Letters, 54 (9). 807-809 doi:10.1063/1.100853
Hattori, R., Shirafuji, J. (1990) Longitudinal electron transport in hydrogenated amorphous silicon/silicon nitride multilayer structures. Applied Physics Letters, 56 (3). 259-261 doi:10.1063/1.103284
Meunier, M., Gattuso, T. R., Adler, D., Haggerty, J. S. (1983) Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silane. Applied Physics Letters, 43 (3). 273-275 doi:10.1063/1.94324
Ukah, C. I., Perz, J. M., Zukotynski, S. (1989) Surface photovoltage spectroscopy in hydrogenated amorphous silicon. Journal of Applied Physics, 65 (9). 3617-3630 doi:10.1063/1.342610
 
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