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Chuang, S.‐F., Collins, S. D., Smith, R. L. (1989) Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study. Applied Physics Letters, 55 (7). 675-677 doi:10.1063/1.101819

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Reference TypeJournal (article/letter/editorial)
TitlePreferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study
JournalApplied Physics Letters
AuthorsChuang, S.‐F.Author
Collins, S. D.Author
Smith, R. L.Author
Year1989 (August 14)Volume55
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.101819Search in ResearchGate
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Mindat Ref. ID8489327Long-form Identifiermindat:1:5:8489327:3
GUID0
Full ReferenceChuang, S.‐F., Collins, S. D., Smith, R. L. (1989) Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study. Applied Physics Letters, 55 (7). 675-677 doi:10.1063/1.101819
Plain TextChuang, S.‐F., Collins, S. D., Smith, R. L. (1989) Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study. Applied Physics Letters, 55 (7). 675-677 doi:10.1063/1.101819
In(1989, August) Applied Physics Letters Vol. 55 (7) AIP Publishing

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Jarmar, T., Seger, J., Ericson, F., Smith, U., Zhang, S.-L. (2003) Cross-sectional transmission electron microscopy study of the influence of niobium on the formation of titanium silicide in small-feature contacts. Journal of Applied Physics, 93 (8). 4480-4484 doi:10.1063/1.1555270
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