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Kim, Y. M., Lo, G. Q., Kwong, D. L., Tasch, A. F., Novak, S. (1990) Extended defect evolution in boron‐implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion. Applied Physics Letters, 56 (13). 1254-1256 doi:10.1063/1.102529

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Reference TypeJournal (article/letter/editorial)
TitleExtended defect evolution in boron‐implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion
JournalApplied Physics Letters
AuthorsKim, Y. M.Author
Lo, G. Q.Author
Kwong, D. L.Author
Tasch, A. F.Author
Novak, S.Author
Year1990 (March 26)Volume56
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.102529Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8489811Long-form Identifiermindat:1:5:8489811:7
GUID0
Full ReferenceKim, Y. M., Lo, G. Q., Kwong, D. L., Tasch, A. F., Novak, S. (1990) Extended defect evolution in boron‐implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion. Applied Physics Letters, 56 (13). 1254-1256 doi:10.1063/1.102529
Plain TextKim, Y. M., Lo, G. Q., Kwong, D. L., Tasch, A. F., Novak, S. (1990) Extended defect evolution in boron‐implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion. Applied Physics Letters, 56 (13). 1254-1256 doi:10.1063/1.102529
In(1990, March) Applied Physics Letters Vol. 56 (13) AIP Publishing

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Kim, Y. M., Lo, G. Q., Kwong, D. L., Tseng, H. H., Hance, R. (1989) Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing. Applied Physics Letters, 55 (22). 2316-2318 doi:10.1063/1.102048
Kim, Y. M. (1991) Roles of Extended Defect Evolution on the Anomalous Diffusion of Boron in Si during Rapid Thermal Annealing. Journal of the Electrochemical Society, 138. 1122pp. doi:10.1149/1.2085728
Kinoshita, H., Kwong, D. L. (1992) Physical model for defect mediated boron diffusion during rapid thermal annealing of ion implanted BF2. Applied Physics Letters, 61 (1). 25-27 doi:10.1063/1.107650
Kinoshita, H., Kwong, D. L. (1992) Kinetic diffusion model of ion‐implanted boron during rapid thermal annealing. Applied Physics Letters, 60 (10). 1202-1204 doi:10.1063/1.107405
Wang, C. L., Unnikrishnan, S., Kim, B. Y., Kwong, D. L., Tasch, A. F. (1996) Evolution of silicon surface morphology during H2 annealing in a rapid thermal chemical vapor deposition system. Applied Physics Letters, 68 (1). 108-110 doi:10.1063/1.116771
Huang, T. H., Kinoshita, H., Kwong, D. L. (1994) Influence of fluorine preamorphization on the diffusion and activation of low‐energy implanted boron during rapid thermal annealing. Applied Physics Letters, 65 (14). 1829-1831 doi:10.1063/1.112857
Lo, G. Q., Kwong, D. L., Lee, S. (1990) Anomalous capacitance‐voltage characteristics of BF2‐implanted and rapid thermal annealedp+‐polycrystalline silicon gate metal‐oxide‐semiconductor structures. Applied Physics Letters, 57 (24). 2573-2575 doi:10.1063/1.103819
Miyake, Masayasu, Aoyama, Shinji (1988) Transient enhanced diffusion of ion‐implanted boron in Si during rapid thermal annealing. Journal of Applied Physics, 63 (5). 1754-1757 doi:10.1063/1.339914
Ting, W., Lo, G. Q., Hsieh, T. Y., Kwong, D. L., Kuehne, John, Magee, Charles W. (1990) Fluorinated thin SiO2grown by rapid thermal processing. Applied Physics Letters, 56 (22). 2255-2257 doi:10.1063/1.103190
Kinoshita, H. (1993) Diffusion Modeling of Ion Implanted Boron in Si during RTA: Correlation of Extended Defect Formation and Annealing with the Enhanced Diffusion of Boron. Journal of the Electrochemical Society, 140. 248pp. doi:10.1149/1.2056097
Kwor, R., Kwong, D. L., Yeo, Y. K. (1984) Rapid thermal annealing characteristics of As+‐ and BF+2‐implanted Si. Applied Physics Letters, 45 (1). 77-79 doi:10.1063/1.94975
 
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