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Chiu, T. H., Ditzenberger, J. A., Luftman, H. S., Tsang, W. T., Ha, N. T. (1990) Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3. Applied Physics Letters, 56 (17). 1688-1690 doi:10.1063/1.103118

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Reference TypeJournal (article/letter/editorial)
TitleTe doping study in molecular beam epitaxial growth of GaSb using Sb2Te3
JournalApplied Physics Letters
AuthorsChiu, T. H.Author
Ditzenberger, J. A.Author
Luftman, H. S.Author
Tsang, W. T.Author
Ha, N. T.Author
Year1990 (April 23)Volume56
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.103118Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8490079Long-form Identifiermindat:1:5:8490079:5
GUID0
Full ReferenceChiu, T. H., Ditzenberger, J. A., Luftman, H. S., Tsang, W. T., Ha, N. T. (1990) Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3. Applied Physics Letters, 56 (17). 1688-1690 doi:10.1063/1.103118
Plain TextChiu, T. H., Ditzenberger, J. A., Luftman, H. S., Tsang, W. T., Ha, N. T. (1990) Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3. Applied Physics Letters, 56 (17). 1688-1690 doi:10.1063/1.103118
In(1990, April) Applied Physics Letters Vol. 56 (17) AIP Publishing

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Tsang, W. T., Chiu, T. H., Kisker, D. W., Ditzenberger, J. A. (1985) Molecular beam epitaxial growth of In1−xGaxAs1−ySbylattice matched to GaSb. Applied Physics Letters, 46 (3). 283-285 doi:10.1063/1.95659
Chiu, T. H., Ditzenberger, J. A. (1990) Chemical beam epitaxial growth of InAs using trimethylindium and arsine. Applied Physics Letters, 56 (22). 2219-2221 doi:10.1063/1.102972
Chiu, T. H., Tsang, W. T., Ditzenberger, J. A., Chu, S. N. G., van der Ziel, J. P. (1986) Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular‐beam epitaxy. Journal of Applied Physics, 60 (1). 205-207 doi:10.1063/1.337682
Tsang, W. T., Dayem, A. H., Chiu, T. H., Cunningham, J. E., Schubert, E. F., Ditzenberger, J. A., Shah, J., Zyskind, J. L., Tabatabaie, N. (1986) Chemical beam epitaxial growth of extremely high quality InGaAs on InP. Applied Physics Letters, 49 (3). 170-172 doi:10.1063/1.97214
Tsang, W. T., Chiu, T. H., Chu, S. N. G., Ditzenberger, J. A. (1985) GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52superlattice lattice matched to InP prepared by molecular beam epitaxy. Applied Physics Letters, 46 (7). 659-661 doi:10.1063/1.95520
Chiu, T. H., Tsang, W. T., Chu, S. N. G., Shah, J., Ditzenberger, J. A. (1985) Molecular beam epitaxy of GaSb0.5As0.5and AlxGa1−xSbyAs1−ylattice matched to InP. Applied Physics Letters, 46 (4). 408-410 doi:10.1063/1.95595
Chiu, T. H., Cunningham, J. E., Ditzenberger, J. A., Jan, W. Y. (1990) Chemical beam epitaxial growth of strained carbon‐doped GaAs. Applied Physics Letters, 57 (2). 171-173 doi:10.1063/1.103974
Chiu, T. H., Tsang, W. T. (1985) Reflection high‐energy electron diffraction studies on the molecular‐beam‐epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb. Journal of Applied Physics, 57 (10). 4572-4577 doi:10.1063/1.335362
Cunningham, J. E., Tsang, W. T., Chiu, T. H., Schubert, E. F. (1987) Molecular beam epitaxial growth of high‐purity AlGaAs. Applied Physics Letters, 50 (12). 769-771 doi:10.1063/1.98040
Chiu, T. H., Tsang, W. T., Ditzenberger, J. A., van der Ziel, J. P. (1986) Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy. Applied Physics Letters, 49 (17). 1051-1052 doi:10.1063/1.97471
Tsang, W. T., Schubert, E. F., Chiu, T. H., Cunningham, J. E., Burkhardt, E. G., Ditzenberger, J. A., Agyekum, E. (1987) Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy. Applied Physics Letters, 51 (10). 761-763 doi:10.1063/1.98859
 
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