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Coffa, S., Calcagno, L., Catania, M., Rimini, E. (1990) Arsenic influence on extended defects produced in silicon by ion implantation. Applied Physics Letters, 56 (24). 2405-2407 doi:10.1063/1.102892

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Reference TypeJournal (article/letter/editorial)
TitleArsenic influence on extended defects produced in silicon by ion implantation
JournalApplied Physics Letters
AuthorsCoffa, S.Author
Calcagno, L.Author
Catania, M.Author
Rimini, E.Author
Year1990 (June 11)Volume56
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.102892Search in ResearchGate
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Mindat Ref. ID8490639Long-form Identifiermindat:1:5:8490639:1
GUID0
Full ReferenceCoffa, S., Calcagno, L., Catania, M., Rimini, E. (1990) Arsenic influence on extended defects produced in silicon by ion implantation. Applied Physics Letters, 56 (24). 2405-2407 doi:10.1063/1.102892
Plain TextCoffa, S., Calcagno, L., Catania, M., Rimini, E. (1990) Arsenic influence on extended defects produced in silicon by ion implantation. Applied Physics Letters, 56 (24). 2405-2407 doi:10.1063/1.102892
In(1990, June) Applied Physics Letters Vol. 56 (24) AIP Publishing

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Coffa, S., Calcagno, L., Campisano, S. U., Ferla, G. (1991) Control of gold concentration profiles in silicon by ion implantation. Journal of Applied Physics, 69 (3). 1350-1354 doi:10.1063/1.347271
Calcagno, L., Coffa, S., Spinella, C., Rimini, E. (1990) Ion channeling analysis of extended-defect annealing in silicon by rapid thermal processes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 45 (1). 442-445 doi:10.1016/0168-583x(90)90871-q
Coffa, S., Calcagno, L., Ferla, G., Campisano, S. U. (1990) Gold implantation inn‐type silicon: Entropy factor and diffusion studies. Journal of Applied Physics, 68 (4). 1601-1605 doi:10.1063/1.346638
Priolo, Francesco, Rimini, Emanuele, Spinella, Corrado, Ferla, Giuseppe (1990) Concentration dependence and interfacial instabilities during ion beam annealing of arsenic‐doped silicon. Applied Physics Letters, 56 (1). 24-26 doi:10.1063/1.102635
Calcagno, L., Sheng, K. L., Torrisi, L., Foti, G. (1984) Thin organic films produced by ion implantation. Applied Physics Letters, 44 (8). 761-763 doi:10.1063/1.94908
Giri, P. K., Coffa, S., Rimini, E. (2001) Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon. Applied Physics Letters, 78 (3). 291-293 doi:10.1063/1.1339253
Benton, J. L., Libertino, S., Kringho/j, P., Eaglesham, D. J., Poate, J. M., Coffa, S. (1997) Evolution from point to extended defects in ion implanted silicon. Journal of Applied Physics, 82 (1). 120-125 doi:10.1063/1.365583
Coffa, S., Calcagno, L., Campisano, S. U., Calleri, G., Ferla, G. (1988) Diffusion of ion‐implanted gold inp‐type silicon. Journal of Applied Physics, 64 (11). 6291-6295 doi:10.1063/1.342087
Coffa, S., Calleri, G., Calcagno, L., Campisano, S. U., Ferla, G. (1988) Entropy factor of donor level in gold implanted silicon. Applied Physics Letters, 52 (7). 558-560 doi:10.1063/1.99416
Giri, P. K., Coffa, S., Raineri, V., Privitera, V., Galvagno, G., La Ferla, A., Rimini, E. (2001) Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon. Journal of Applied Physics, 89 (8). 4310-4317 doi:10.1063/1.1357464
Calcagno, L., Campisano, S. U., Coffa, S. (1989) Gold diffusion in chemical‐vapor‐deposited amorphous silicon. Journal of Applied Physics, 66 (4). 1874-1876 doi:10.1063/1.344491
 
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