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Bube, Richard H., Echeverria, Lisa, Redfield, David (1990) Evidence for a stretched‐exponential description of optical defect generation in hydrogenated amorphous silicon. Applied Physics Letters, 57 (1). 79-80 doi:10.1063/1.103584

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Reference TypeJournal (article/letter/editorial)
TitleEvidence for a stretched‐exponential description of optical defect generation in hydrogenated amorphous silicon
JournalApplied Physics Letters
AuthorsBube, Richard H.Author
Echeverria, LisaAuthor
Redfield, DavidAuthor
Year1990 (July 2)Volume57
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.103584Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8491372Long-form Identifiermindat:1:5:8491372:6
GUID0
Full ReferenceBube, Richard H., Echeverria, Lisa, Redfield, David (1990) Evidence for a stretched‐exponential description of optical defect generation in hydrogenated amorphous silicon. Applied Physics Letters, 57 (1). 79-80 doi:10.1063/1.103584
Plain TextBube, Richard H., Echeverria, Lisa, Redfield, David (1990) Evidence for a stretched‐exponential description of optical defect generation in hydrogenated amorphous silicon. Applied Physics Letters, 57 (1). 79-80 doi:10.1063/1.103584
In(1990, July) Applied Physics Letters Vol. 57 (1) AIP Publishing

See Also

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Benatar, Lisa E., Redfield, David, Bube, Richard H. (1993) Interpretation of the activation energy derived from a stretched‐exponential description of defect density kinetics in hydrogenated amorphous silicon. Journal of Applied Physics, 73 (12). 8659-8661 doi:10.1063/1.353378
Bube, Richard H., Redfield, David (1989) Variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon. Journal of Applied Physics, 66 (7). 3074-3081 doi:10.1063/1.344163
Bube, Richard H., Redfield, David (1992) Limitations on models describing the kinetics of light‐induced defect creation in hydrogenated amorphous silicon. Journal of Applied Physics, 71 (10). 5246-5247 doi:10.1063/1.350582
Bube, Richard H., Benatar, Lisa, Redfield, David (1994) Unique correlation of the Fermi energy with the metastable defect density in amorphous silicon. Journal of Applied Physics, 75 (3). 1571-1576 doi:10.1063/1.356393
Redfield, David, Bube, Richard H. (1996) Carrier-induced mechanism for defect formation in hydrogenated amorphous silicon. Philosophical Magazine B, 74 (3). 309-315 doi:10.1080/01418639608243527
Bube, Richard H., Redfield, David (1989) Kinetic and steady‐state effects of illumination on defects in hydrogenated amorphous silicon. Journal of Applied Physics, 66 (2). 820-828 doi:10.1063/1.343503
Redfield, David, Bube, Richard H. (1989) Reinterpretation of degradation kinetics of amorphous silicon. Applied Physics Letters, 54 (11). 1037-1039 doi:10.1063/1.100790
Bube, Richard H., Benatar, Lisa E., Bube, Kenneth P. (1996) Values of capture cross sections of metastable defects in hydrogenated amorphous silicon. Journal of Applied Physics, 79 (4). 1926-1934 doi:10.1063/1.361082
Bube, Richard H., Benatar, Lisa E., Grimbergen, Michael N., Redfield, David (1992) Corrections to the constant photoconductivity method for determining defect densities, with application to amorphous silicon. Journal of Applied Physics, 72 (12). 5766-5777 doi:10.1063/1.351931
Redfield, David, Bube, Richard H. (1990) Identification of defects in amorphous silicon. Physical Review Letters, 65 (4). 464-467 doi:10.1103/physrevlett.65.464
Kanicki, J., Sankaran, M., Gelatos, A., Crowder, M. S., Tober, E. D. (1990) Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride. Applied Physics Letters, 57 (7). 698-700 doi:10.1063/1.104255
 
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