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Temkin, H., Tanbun‐Ek, T., Logan, R. A., Olsson, N. A., Sergent, M. A., Wecht, K. W., Cebula, D. A. (1990) InGaAs/InP distributed feedback quantum well laser. Applied Physics Letters, 57 (13). 1295-1297 doi:10.1063/1.103463

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Reference TypeJournal (article/letter/editorial)
TitleInGaAs/InP distributed feedback quantum well laser
JournalApplied Physics Letters
AuthorsTemkin, H.Author
Tanbun‐Ek, T.Author
Logan, R. A.Author
Olsson, N. A.Author
Sergent, M. A.Author
Wecht, K. W.Author
Cebula, D. A.Author
Year1990 (September 24)Volume57
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.103463Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8491639Long-form Identifiermindat:1:5:8491639:8
GUID0
Full ReferenceTemkin, H., Tanbun‐Ek, T., Logan, R. A., Olsson, N. A., Sergent, M. A., Wecht, K. W., Cebula, D. A. (1990) InGaAs/InP distributed feedback quantum well laser. Applied Physics Letters, 57 (13). 1295-1297 doi:10.1063/1.103463
Plain TextTemkin, H., Tanbun‐Ek, T., Logan, R. A., Olsson, N. A., Sergent, M. A., Wecht, K. W., Cebula, D. A. (1990) InGaAs/InP distributed feedback quantum well laser. Applied Physics Letters, 57 (13). 1295-1297 doi:10.1063/1.103463
In(1990, September) Applied Physics Letters Vol. 57 (13) AIP Publishing

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Temkin, H., Dutta, N. K., Tanbun‐Ek, T., Logan, R. A., Sergent, A. M. (1990) InGaAs/InP quantum well lasers with sub‐mA threshold current. Applied Physics Letters, 57 (16). 1610-1612 doi:10.1063/1.104085
Tanbun‐Ek, T., Logan, R. A., Olsson, N. A., Temkin, H., Sergent, A. M., Wecht, K. W. (1990) High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers. Applied Physics Letters, 57 (3). 224-226 doi:10.1063/1.103722
Lidgard, A., Tanbun‐Ek, T., Logan, R. A., Temkin, H., Wecht, K. W., Olsson, N. A. (1990) External‐cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range. Applied Physics Letters, 56 (9). 816-817 doi:10.1063/1.102672
Tanbun‐Ek, T., Logan, R. A., Chu, S. N. G., Sergent, A. M., Wecht, K. W. (1990) Effects of strain in multiple quantum well distributed feedback lasers. Applied Physics Letters, 57 (21). 2184-2186 doi:10.1063/1.103929
Temkin, H., Tanbun‐Ek, T., Logan, R. A. (1990) Strained InGaAs/InP quantum well lasers. Applied Physics Letters, 56 (13). 1210-1212 doi:10.1063/1.102562
Dutta, N. K., Temkin, H., Tanbun‐Ek, T., Logan, R. (1990) Linewidth enhancement factor for InGaAs/InP strained quantum well lasers. Applied Physics Letters, 57 (14). 1390-1391 doi:10.1063/1.103444
Temkin, H., Tanbun‐Ek, T., Logan, R. A., Lewis, J. A., Dutta, N. K. (1990) InGaAs/InP graded‐index quantum well lasers with nearly ideal static characteristics. Applied Physics Letters, 56 (13). 1222-1224 doi:10.1063/1.102521
Tsang, W. T., Choa, F. S., Wu, M. C., Chen, Y. K., Logan, R. A., Tanbun‐Ek, T., Chu, S. N. G., Tai, K., Sergent, A. M., Wecht, K. W. (1991) 1.5 μm wavelength InGaAs/InGaAsP distributed feedback multi‐quantum‐well lasers grown by chemical beam epitaxy. Applied Physics Letters, 59 (19). 2375-2377 doi:10.1063/1.106020
Berthold, K., Levi, A. F. J., Tanbun‐Ek, T., Logan, R. A. (1990) Wavelength switching in InGaAs/InP quantum well lasers. Applied Physics Letters, 56 (2). 122-124 doi:10.1063/1.103048
Tsang, W. T., Wu, M. C., Tanbun‐Ek, T., Logan, R. A., Chu, S. N. G., Sergent, A. M. (1990) Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy. Applied Physics Letters, 57 (20). 2065-2067 doi:10.1063/1.103942
Temkin, H., Coblentz, D., Logan, R. A., van der Ziel, J. P., Tanbun‐Ek, T., Yadvish, R. D., Sergent, A. M. (1993) High temperature characteristics of InGaAsP/InP laser structures. Applied Physics Letters, 62 (19). 2402-2404 doi:10.1063/1.109378
 
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