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Duncan, W. M., Matyi, R. J., Shichijo, H., Kao, Y.‐C., Liu, H.‐Y. (1990) Micro‐Raman characterization of structural defects in patterned GaAs‐on‐Si. Applied Physics Letters, 57 (16). 1631-1633 doi:10.1063/1.104070

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Reference TypeJournal (article/letter/editorial)
TitleMicro‐Raman characterization of structural defects in patterned GaAs‐on‐Si
JournalApplied Physics Letters
AuthorsDuncan, W. M.Author
Matyi, R. J.Author
Shichijo, H.Author
Kao, Y.‐C.Author
Liu, H.‐Y.Author
Year1990 (October 15)Volume57
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.104070Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8491844Long-form Identifiermindat:1:5:8491844:8
GUID0
Full ReferenceDuncan, W. M., Matyi, R. J., Shichijo, H., Kao, Y.‐C., Liu, H.‐Y. (1990) Micro‐Raman characterization of structural defects in patterned GaAs‐on‐Si. Applied Physics Letters, 57 (16). 1631-1633 doi:10.1063/1.104070
Plain TextDuncan, W. M., Matyi, R. J., Shichijo, H., Kao, Y.‐C., Liu, H.‐Y. (1990) Micro‐Raman characterization of structural defects in patterned GaAs‐on‐Si. Applied Physics Letters, 57 (16). 1631-1633 doi:10.1063/1.104070
In(1990, October) Applied Physics Letters Vol. 57 (16) AIP Publishing

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Matyi, R. J., Duncan, W. M., Shichijo, H., Tsai, H. L. (1988) Effect of post‐growth annealing on patterned GaAs on silicon. Applied Physics Letters, 53 (26). 2611-2613 doi:10.1063/1.100174
Matyi, R. J., Shichijo, H., Moore, T. M., Tsai, H‐L. (1987) Microstructural characterization of patterned gallium arsenide grown on 〈001〉 silicon substrates. Applied Physics Letters, 51 (1). 18-20 doi:10.1063/1.98890
Estrera, J. P., Stevens, P. D., Glosser, R., Duncan, W. M., Kao, Y. C., Liu, H. Y., Beam, E. A. (1992) Phonon mode study of near‐lattice‐matched InxGa1−xAs using micro‐Raman spectroscopy. Applied Physics Letters, 61 (16). 1927-1929 doi:10.1063/1.108366
Tsai, H. L., Kao, Y. C. (1990) Effect of patterning on defect structure in GaAs grown on Si. Applied Physics Letters, 57 (3). 288-290 doi:10.1063/1.103716
Gerster, J., Schneider, J. M., Ehret, C., Limmer, W., Sauer, R., Heinecke, H. (1997) Micro-Raman characterization of the electronic properties of Si-doped GaAs layers grown on patterned substrates. Applied Physics Letters, 70 (1). 69-71 doi:10.1063/1.119309
Lee, J. W., Shichijo, H., Tsai, H. L., Matyi, R. J. (1987) Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 50 (1). 31-33 doi:10.1063/1.98117
Deppe, D. G., Holonyak, N., Hsieh, K. C., Nam, D. W., Plano, W. E., Matyi, R. J., Shichijo, H. (1988) Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si. Applied Physics Letters, 52 (21). 1812-1814 doi:10.1063/1.99633
Sakai, Shiro, Matyi, R. J., Shichijo, H. (1988) Growth of GaAs on GaAs‐coated Si by liquid‐phase epitaxy. Journal of Applied Physics, 63 (4). 1075-1079 doi:10.1063/1.340010
Deppe, D. G., Nam, D. W., Holonyak, N., Hsieh, K. C., Matyi, R. J., Shichijo, H., Epler, J. E., Chung, H. F. (1987) Stability of 300 K continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well lasers grown on Si. Applied Physics Letters, 51 (16). 1271-1273 doi:10.1063/1.98702
Deppe, D. G., Hall, D. C., Holonyak, N., Matyi, R. J., Shichijo, H., Epler, J. E. (1988) Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si. Applied Physics Letters, 53 (10). 874-876 doi:10.1063/1.100100
Plano, W. E., Nam, D. W., Hsieh, K. C., Guido, L. J., Kish, F. A., Sugg, A. R., Holonyak, N., Matyi, R. J., Shichijo, H. (1989) Dislocation‐accelerated impurity‐induced layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures grown on GaAs‐on‐Si. Applied Physics Letters, 55 (19). 1993-1995 doi:10.1063/1.102143
 
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