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Polman, A., Lidgard, A., Jacobson, D. C., Becker, P. C., Kistler, R. C., Blonder, G. E., Poate, J. M. (1990) 1.54 μm room‐temperature luminescence of MeV erbium‐implanted silica glass. Applied Physics Letters, 57 (26). 2859-2861 doi:10.1063/1.104203

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Reference TypeJournal (article/letter/editorial)
Title1.54 μm room‐temperature luminescence of MeV erbium‐implanted silica glass
JournalApplied Physics Letters
AuthorsPolman, A.Author
Lidgard, A.Author
Jacobson, D. C.Author
Becker, P. C.Author
Kistler, R. C.Author
Blonder, G. E.Author
Poate, J. M.Author
Year1990 (December 24)Volume57
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.104203Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492719Long-form Identifiermindat:1:5:8492719:0
GUID0
Full ReferencePolman, A., Lidgard, A., Jacobson, D. C., Becker, P. C., Kistler, R. C., Blonder, G. E., Poate, J. M. (1990) 1.54 μm room‐temperature luminescence of MeV erbium‐implanted silica glass. Applied Physics Letters, 57 (26). 2859-2861 doi:10.1063/1.104203
Plain TextPolman, A., Lidgard, A., Jacobson, D. C., Becker, P. C., Kistler, R. C., Blonder, G. E., Poate, J. M. (1990) 1.54 μm room‐temperature luminescence of MeV erbium‐implanted silica glass. Applied Physics Letters, 57 (26). 2859-2861 doi:10.1063/1.104203
In(1990, December) Applied Physics Letters Vol. 57 (26) AIP Publishing

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Zheng, B., Michel, J., Ren, F. Y. G., Kimerling, L. C., Jacobson, D. C., Poate, J. M. (1994) Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode. Applied Physics Letters, 64 (21). 2842-2844 doi:10.1063/1.111977
Polman, A., Jacobson, D. C., Eaglesham, D. J., Kistler, R. C., Poate, J. M. (1991) Optical doping of waveguide materials by MeV Er implantation. Journal of Applied Physics, 70 (7). 3778-3784 doi:10.1063/1.349234
Adler, D. L., Jacobson, D. C., Eaglesham, D. J., Marcus, M. A., Benton, J. L., Poate, J. M., Citrin, P. H. (1992) Local structure of 1.54‐μm‐luminescence Er3+implanted in Si. Applied Physics Letters, 61 (18). 2181-2183 doi:10.1063/1.108288
Eaglesham, D. J., Michel, J., Fitzgerald, E. A., Jacobson, D. C., Poate, J. M., Benton, J. L., Polman, A., Xie, Y.‐H., Kimerling, L. C. (1991) Microstructure of erbium‐implanted Si. Applied Physics Letters, 58 (24). 2797-2799 doi:10.1063/1.104739
Polman, A., Jacobson, D.C., Lidgard, A., Poate, J.M., Arnold, G.W. (1991) Photoluminescence and structural characterization of MeV erbium-implanted silica glass. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1313-1316 doi:10.1016/0168-583x(91)95819-y
Shin, Jung H., Hoven, G. N. van den, Polman, A. (1995) Origin of the 1.54 μm luminescence of erbium‐implanted porous silicon. Applied Physics Letters, 66 (18). 2379-2381 doi:10.1063/1.113989
Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y.‐H., Poate, J. M., Kimerling, L. C. (1991) Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon. Journal of Applied Physics, 70 (5). 2672-2678 doi:10.1063/1.349382
Lidgard, A., Simpson, J. R., Becker, P. C. (1990) Output saturation characteristics of erbium‐doped fiber amplifiers pumped at 975 nm. Applied Physics Letters, 56 (26). 2607-2609 doi:10.1063/1.102852
Polman, A., Jacobson, D. C., Coffa, S., Poate, J. M., Roorda, S., Sinke, W. C. (1990) Defect states of amorphous Si probed by the diffusion and solubility of Cu. Applied Physics Letters, 57 (12). 1230-1232 doi:10.1063/1.103493
Schubert, E. F., Vredenberg, A. M., Hunt, N. E. J., Wong, Y. H., Becker, P. C., Poate, J. M., Jacobson, D. C., Feldman, L. C., Zydzik, G. J. (1992) Giant enhancement of luminescence intensity in Er‐doped Si/SiO2 resonant cavities. Applied Physics Letters, 61 (12). 1381-1383 doi:10.1063/1.107544
Roth, J. A., Olson, G. L., Jacobson, D. C., Poate, J. M. (1990) Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation. Applied Physics Letters, 57 (13). 1340-1342 doi:10.1063/1.103477
 
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