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Zappe, Hans P., As, Donat J. (1990) Mechanisms for the emission of visible light from GaAs field‐effect transistors. Applied Physics Letters, 57 (27). 2919-2921 doi:10.1063/1.103730

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Reference TypeJournal (article/letter/editorial)
TitleMechanisms for the emission of visible light from GaAs field‐effect transistors
JournalApplied Physics Letters
AuthorsZappe, Hans P.Author
As, Donat J.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103730Search in ResearchGate
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Mindat Ref. ID8492727Long-form Identifiermindat:1:5:8492727:9
GUID0
Full ReferenceZappe, Hans P., As, Donat J. (1990) Mechanisms for the emission of visible light from GaAs field‐effect transistors. Applied Physics Letters, 57 (27). 2919-2921 doi:10.1063/1.103730
Plain TextZappe, Hans P., As, Donat J. (1990) Mechanisms for the emission of visible light from GaAs field‐effect transistors. Applied Physics Letters, 57 (27). 2919-2921 doi:10.1063/1.103730
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Zappe, Hans P., Moglestue, C. (1990) Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field‐effect transistors. Journal of Applied Physics, 68 (5). 2501-2503 doi:10.1063/1.346515
Zappe, Hans P., As, D. J. (1991) Spectrum of hot‐electron luminescence from high electron mobility transistors. Applied Physics Letters, 59 (18). 2257-2259 doi:10.1063/1.106089
Sakanoue, Tomo, Fujiwara, Eiichi, Yamada, Ryo, Tada, Hirokazu (2004) Visible light emission from polymer-based field-effect transistors. Applied Physics Letters, 84 (16). 3037-3039 doi:10.1063/1.1710713
Zappe, Hans P., Jantz, Wolfgang (1990) Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems. Journal of Applied Physics, 68 (12). 6309-6314 doi:10.1063/1.346874
Jupina, M. H., Garmire, E. M., Shibata, N., Zembutsu, S. (1990) ZnSe/ZnSe0.92S0.08/GaAs single‐crystal waveguides as visible modulators. Applied Physics Letters, 57 (27). 2894-2896 doi:10.1063/1.103769
Köck, A., Gornik, E., Hauser, M., Beinstingl, W. (1990) Strongly directional emission from AlGaAs/GaAs light‐emitting diodes. Applied Physics Letters, 57 (22). 2327-2329 doi:10.1063/1.103883
Dreifus, D. L., Sneed, B. P., Ren, J., Cook, J. W., Schetzina, J. F., Kolbas, R. M. (1990) ZnSe field‐effect transistors. Applied Physics Letters, 57 (16). 1663-1665 doi:10.1063/1.104079
Feng, M., Holonyak, N., Hafez, W. (2004) Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors. Applied Physics Letters, 84 (1). 151-153 doi:10.1063/1.1637950
Sun, C. C., Xu, J. M., Hagley, A., Surridge, R., SpringThorpe, A. (1990) Observation of electron velocity overshoot in AlxGa1−xAs/GaAs heterostructure insulated‐gate field‐effect transistors. Applied Physics Letters, 57 (6). 566-568 doi:10.1063/1.103622
Irokawa, Y., Nakano, Y., Ishiko, M., Kachi, T., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I. (2004) MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors. Applied Physics Letters, 84 (15). 2919-2921 doi:10.1063/1.1704876
Lehovec, K., Notthoff, J. K., Zuleeg, R. (1990) Superhot electron model for ionizing radiation dose rate response of GaAs junction field‐effect transistors. Applied Physics Letters, 56 (11). 1052-1054 doi:10.1063/1.102612
 
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