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Jiang, Y., Teich, M. C., Wang, W. I. (1990) Forbidden Auger process in strained InGaSb/AlGaSb quantum wells. Applied Physics Letters, 57 (27). 2922-2924 doi:10.1063/1.103731

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Reference TypeJournal (article/letter/editorial)
TitleForbidden Auger process in strained InGaSb/AlGaSb quantum wells
JournalApplied Physics Letters
AuthorsJiang, Y.Author
Teich, M. C.Author
Wang, W. I.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103731Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492730Long-form Identifiermindat:1:5:8492730:3
GUID0
Full ReferenceJiang, Y., Teich, M. C., Wang, W. I. (1990) Forbidden Auger process in strained InGaSb/AlGaSb quantum wells. Applied Physics Letters, 57 (27). 2922-2924 doi:10.1063/1.103731
Plain TextJiang, Y., Teich, M. C., Wang, W. I. (1990) Forbidden Auger process in strained InGaSb/AlGaSb quantum wells. Applied Physics Letters, 57 (27). 2922-2924 doi:10.1063/1.103731
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Jiang, Y., Teich, M. C., Wang, W. I. (1992) Enhanced exciton absorption and saturation limit in strained InGaAs/InP quantum wells. Journal of Applied Physics, 71 (2). 769-772 doi:10.1063/1.351341
Jiang, Y., Teich, M. C., Wang, W. I., Meyer, J. R. (1992) Auger recombination in HgCdTe quantum wires and quantum boxes. Journal of Applied Physics, 71 (7). 3394-3398 doi:10.1063/1.350935
Jiang, Y., Teich, M. C., Wang, W. I. (1991) The Auger recombination rate is larger in a GaSb quantum well than in bulk GaSb. Journal of Applied Physics, 69 (2). 836-840 doi:10.1063/1.347318
Jiang, Y., Teich, M. C., Wang, W. I. (1990) Hole impact ionization enhancement in AlxGa1−xSb. Journal of Applied Physics, 67 (5). 2488-2493 doi:10.1063/1.345499
Shan, W., Fang, X. M., Li, D., Jiang, S., Shen, S. C., Hou, H. Q., Feng, W., Zhou, J. M. (1990) Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells. Applied Physics Letters, 57 (5). 475-477 doi:10.1063/1.103670
Kuramochi, Eiichi, Takanashi, Yoshifumi (1995) Strain effects in InGaSb/AlGaSb quantum wells grown by molecular beam epitaxy. Journal of Applied Physics, 77 (11). 5706-5711 doi:10.1063/1.359213
Jahan, Nahid A., Hermannstädter, Claus, Sasakura, Hirotaka, Rotter, Thomas J., Ahirwar, Pankaj, Balakrishnan, Ganesh, Kumano, Hidekazu, Suemune, Ikuo (2013) Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells. Journal of Applied Physics, 113 (5). 53505pp. doi:10.1063/1.4789374
Su, Y. K., Juang, F. S., Su, C. H. (1992) Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition. Journal of Applied Physics, 71 (3). 1368-1372 doi:10.1063/1.351255
Jiang, Y., Teich, M. C., Wang, W. I. (1991) Carrier lifetimes and threshold currents in HgCdTe double heterostructure and multi‐quantum‐well lasers. Journal of Applied Physics, 69 (10). 6869-6875 doi:10.1063/1.347676
Bennett, Brian R., Ancona, Mario G., Boos, J. Brad, Shanabrook, Benjamin V. (2007) Mobility enhancement in strained p-InGaSb quantum wells. Applied Physics Letters, 91 (4). 42104pp. doi:10.1063/1.2762279
Goossen, K. W., Cunningham, J. E., Jan, W. Y. (1990) Excitonic electroabsorption in extremely shallow quantum wells. Applied Physics Letters, 57 (24). 2582-2584 doi:10.1063/1.103822
 
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