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Richard, T. A., Major, J. S., Kish, F. A., Holonyak, N., Smith, S. C., Burnham, R. D. (1990) Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing. Applied Physics Letters, 57 (27). 2904-2906 doi:10.1063/1.103748

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Reference TypeJournal (article/letter/editorial)
TitleLow‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing
JournalApplied Physics Letters
AuthorsRichard, T. A.Author
Major, J. S.Author
Kish, F. A.Author
Holonyak, N.Author
Smith, S. C.Author
Burnham, R. D.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103748Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492753Long-form Identifiermindat:1:5:8492753:4
GUID0
Full ReferenceRichard, T. A., Major, J. S., Kish, F. A., Holonyak, N., Smith, S. C., Burnham, R. D. (1990) Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing. Applied Physics Letters, 57 (27). 2904-2906 doi:10.1063/1.103748
Plain TextRichard, T. A., Major, J. S., Kish, F. A., Holonyak, N., Smith, S. C., Burnham, R. D. (1990) Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing. Applied Physics Letters, 57 (27). 2904-2906 doi:10.1063/1.103748
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing


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