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Ghandhi, S. K., Taskar, N. R., Parat, K. K., Bhat, I. B. (1990) Indium doping ofn‐type HgCdTe layers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 57 (3). 252-254 doi:10.1063/1.103706

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Reference TypeJournal (article/letter/editorial)
TitleIndium doping ofn‐type HgCdTe layers grown by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsGhandhi, S. K.Author
Taskar, N. R.Author
Parat, K. K.Author
Bhat, I. B.Author
Year1990 (July 16)Volume57
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.103706Search in ResearchGate
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Mindat Ref. ID8492799Long-form Identifiermindat:1:5:8492799:6
GUID0
Full ReferenceGhandhi, S. K., Taskar, N. R., Parat, K. K., Bhat, I. B. (1990) Indium doping ofn‐type HgCdTe layers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 57 (3). 252-254 doi:10.1063/1.103706
Plain TextGhandhi, S. K., Taskar, N. R., Parat, K. K., Bhat, I. B. (1990) Indium doping ofn‐type HgCdTe layers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 57 (3). 252-254 doi:10.1063/1.103706
In(1990, July) Applied Physics Letters Vol. 57 (3) AIP Publishing

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Ghandhi, S. K., Taskar, N. R., Parat, K. K., Terry, D., Bhat, I. B. (1988) Extrinsicp‐type doping of HgCdTe grown by organometallic epitaxy. Applied Physics Letters, 53 (17). 1641-1643 doi:10.1063/1.99936
Ghandhi, S. K., Taskar, N. R., Bhat, I. B. (1987) Arsenic‐dopedp‐CdTe layers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 50 (14). 900-902 doi:10.1063/1.98027
Ghandhi, S. K., Parat, K. K., Ehsani, H., Bhat, I. B. (1991) High quality planar HgCdTe photodiodes fabricated by the organometallic epitaxy (Direct Alloy Growth Process). Applied Physics Letters, 58 (8). 828-830 doi:10.1063/1.104502
Ghandhi, S. K., Bhat, I. B., Taskar, N. R. (1986) Growth and properties of Hg1−xCdxTe on GaAs substrates by organometallic vapor‐phase epitaxy. Journal of Applied Physics, 59 (6). 2253-2255 doi:10.1063/1.336371
Ghandhi, S. K., Taskar, N. R., Bhat, I. B. (1986) Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy. Applied Physics Letters, 49 (19). 1290-1292 doi:10.1063/1.97389
Bhat, I. B., Parat, K. K., Ehsani, H., Ghandhi, S. K. (1991) N‐channel enhancement mode field‐effect transistors in Hg1−xCdxTe grown by organometallic epitaxy (direct alloy growth process). Applied Physics Letters, 59 (13). 1575-1577 doi:10.1063/1.106288
Ghandhi, Sorab K., Taskar, Nikhil R., Bhat, Ishwara B. (1985) Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxy. Applied Physics Letters, 47 (7). 742-745 doi:10.1063/1.96024
Ghandhi, S. K., Bhat, I. (1984) Growth of CdTe on InSb by organometallic vapor phase epitaxy. Applied Physics Letters, 45 (6). 678-680 doi:10.1063/1.95354
Olego, D. J., Petruzzello, J., Ghandhi, S. K., Taskar, N. R., Bhat, I. B. (1987) Elastic strains in CdTe‐GaAs heterostructures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (2). 127-129 doi:10.1063/1.98590
Taskar, N.R., Bhat, I.B., Parat, K.K., Ghandhi, S.K., Scilla, G.J. (1991) The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process). Journal of Crystal Growth, 110 (4). 692-696 doi:10.1016/0022-0248(91)90625-f
Petruzzello, J., Olego, D., Ghandhi, S. K., Taskar, N. R., Bhat, I. (1987) Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (20). 1423-1425 doi:10.1063/1.97842
 
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