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Boucaud, P., Julien, F. H., Yang, D. D., Lourtioz, J‐M., Rosencher, E., Bois, P., Nagle, J. (1990) Detailed analysis of second‐harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wells. Applied Physics Letters, 57 (3). 215-217 doi:10.1063/1.103742

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Reference TypeJournal (article/letter/editorial)
TitleDetailed analysis of second‐harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wells
JournalApplied Physics Letters
AuthorsBoucaud, P.Author
Julien, F. H.Author
Yang, D. D.Author
Lourtioz, J‐M.Author
Rosencher, E.Author
Bois, P.Author
Nagle, J.Author
Year1990 (July 16)Volume57
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.103742Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492847Long-form Identifiermindat:1:5:8492847:2
GUID0
Full ReferenceBoucaud, P., Julien, F. H., Yang, D. D., Lourtioz, J‐M., Rosencher, E., Bois, P., Nagle, J. (1990) Detailed analysis of second‐harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wells. Applied Physics Letters, 57 (3). 215-217 doi:10.1063/1.103742
Plain TextBoucaud, P., Julien, F. H., Yang, D. D., Lourtioz, J‐M., Rosencher, E., Bois, P., Nagle, J. (1990) Detailed analysis of second‐harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wells. Applied Physics Letters, 57 (3). 215-217 doi:10.1063/1.103742
In(1990, July) Applied Physics Letters Vol. 57 (3) AIP Publishing

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Seto, M., Helm, M., Moussa, Z., Boucaud, P., Julien, F. H., Lourtioz, J.‐M., Nützel, J. F., Abstreiter, G. (1994) Second‐harmonic generation in asymmetric Si/SiGe quantum wells. Applied Physics Letters, 65 (23). 2969-2971 doi:10.1063/1.113028
Rosencher, E., Bois, P., Nagle, J., Costard, E., Delaitre, S. (1989) Observation of nonlinear optical rectification at 10.6 μm in compositionally asymmetrical AlGaAs multiquantum wells. Applied Physics Letters, 55 (16). 1597-1599 doi:10.1063/1.102248
Fiore, A., Rosencher, E., Berger, V., Nagle, J. (1995) Electric field induced interband second harmonic generation in GaAs/AlGaAs quantum wells. Applied Physics Letters, 67 (25). 3765-3767 doi:10.1063/1.115376
Julien, F. H., Vagos, P., Lourtioz, J.‐M., Yang, D. D., Planel, R. (1991) Novel all‐optical 10 μm waveguide modulator based on intersubband absorption in GaAs/AlGaAs quantum wells. Applied Physics Letters, 59 (21). 2645-2647 doi:10.1063/1.105925
Rosencher, E., Bois, Ph., Vinter, B., Nagle, J., Kaplan, D. (1990) Giant nonlinear optical rectification at 8–12 μm in asymmetric coupled quantum wells. Applied Physics Letters, 56 (19). 1822-1824 doi:10.1063/1.103081
Rosencher, R., Vodjdani, N., Nagle, J., Bois, P., Costard, E., Delaitre, S. (1989) Photocapacitance spectroscopy of GaAs/AlGaAs multiquantum wells. Applied Physics Letters, 55 (18). 1853-1855 doi:10.1063/1.102186
Fiore, A., Rosencher, E., Bois, P., Nagle, J., Laurent, N. (1994) Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm. Applied Physics Letters, 64 (4). 478-480 doi:10.1063/1.111135
Gauthier-Lafaye, O., Julien, F. H., Cabaret, S., Lourtioz, J.-M., Strasser, G., Gornik, E., Helm, M., Bois, P. (1999) High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 μm with 2.5% tunability. Applied Physics Letters, 74 (11). 1537-1539 doi:10.1063/1.123608
Duboz, J. Y., Costard, E., Rosencher, E., Bois, P., Nagle, J., Berset, J. M., Jaroszynski, D., Ortega, J. M. (1995) Electron relaxation time measurements in GaAs/AlGaAs quantum wells: Intersubband absorption saturation by a free‐electron laser. Journal of Applied Physics, 77 (12). 6492-6495 doi:10.1063/1.359125
Gauthier-Lafaye, O., Boucaud, P., Julien, F. H., Sauvage, S., Cabaret, S., Lourtioz, J.-M., Thierry-Mieg, V., Planel, R. (1997) Long-wavelength (≈15.5 μm) unipolar semiconductor laser in GaAs quantum wells. Applied Physics Letters, 71 (25). 3619-3621 doi:10.1063/1.120459
Boucaud, P., Lourtioz, J.‐M., Julien, F. H., Warren, P., Dutoit, M. (1996) Intersubband absorption in Si/Si1−x−yGexCy quantum wells. Applied Physics Letters, 69 (12). 1734-1736 doi:10.1063/1.118013
 
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