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Spinella, C., Lombardo, S., Campisano, S. U. (1990) Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon. Applied Physics Letters, 57 (6). 554-556 doi:10.1063/1.103644

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Reference TypeJournal (article/letter/editorial)
TitleGrain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon
JournalApplied Physics Letters
AuthorsSpinella, C.Author
Lombardo, S.Author
Campisano, S. U.Author
Year1990 (August 6)Volume57
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.103644Search in ResearchGate
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Mindat Ref. ID8493062Long-form Identifiermindat:1:5:8493062:6
GUID0
Full ReferenceSpinella, C., Lombardo, S., Campisano, S. U. (1990) Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon. Applied Physics Letters, 57 (6). 554-556 doi:10.1063/1.103644
Plain TextSpinella, C., Lombardo, S., Campisano, S. U. (1990) Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon. Applied Physics Letters, 57 (6). 554-556 doi:10.1063/1.103644
In(1990, August) Applied Physics Letters Vol. 57 (6) AIP Publishing

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Spinella, C., Lombardo, S., Campisano, S. U. (1989) Grain growth and size distribution in ionā€irradiated chemical vapor deposited amorphous silicon. Applied Physics Letters, 55 (2). 109-111 doi:10.1063/1.102118
Spinella, C., Lombardo, S., Campisano, S. U. (1991) Early stages of grain growth in ion-irradiated amorphous silicon. Physical Review Letters, 66 (8). 1102-1105 doi:10.1103/physrevlett.66.1102
Spinella, C., Lombardo, S., Campisano, S.U. (1989) Amorphous to polycrystal transition in ion irradiated chemical vapor deposited amorphous silicon. Applied Surface Science, 43. 187-190 doi:10.1016/0169-4332(89)90209-2
Calcagno, L., Campisano, S. U., Coffa, S. (1989) Gold diffusion in chemicalā€vaporā€deposited amorphous silicon. Journal of Applied Physics, 66 (4). 1874-1876 doi:10.1063/1.344491
Priolo, F., La Ferla, A., Spinella, C., Rimini, E., Campisano, S.U., Ferla, G. (1990) Crystal-amorphous-silicon interface kinetics under ion beam irradiation. Applied Surface Science, 41. 619-626 doi:10.1016/0169-4332(89)90132-3
Spinella, Corrado, Lombardo, Salvatore, Priolo, Francesco, Campisano, S. Ugo (1996) Mechanism and kinetics of the ion-assisted nucleation in amorphous silicon. Physical Review B, 53 (12) 7742-7749 doi:10.1103/physrevb.53.7742
Spinella, C., Priolo, F., Lombardo, S., Campisano, S.U., Rimini, E. (1991) Ion-assisted crystallization in silicon: epitaxy and grain growth. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 363-371 doi:10.1016/0168-583x(91)95239-a
Pavesi, L., Giebel, G., Ziglio, F., Mariotto, G., Priolo, F., Campisano, S. U., Spinella, C. (1994) Nanocrystal size modifications in porous silicon by preanodization ion implantation. Applied Physics Letters, 65 (17). 2182-2184 doi:10.1063/1.112755
Spinella, C, Battaglia, A, Priolo, F, Campisano, S. U (1991) Ion-Assisted Nucleation in Amorphous Silicon: Ion Mass and Dose Rate Effects. Europhysics Letters (EPL), 16. 313-318 doi:10.1209/0295-5075/16/3/016
Campisano, S. U., Foti, G., Servidori, M. (1980) Laser irradiation of furnace preannealed (111) ion implanted silicon. Applied Physics Letters, 36 (4). 279-281 doi:10.1063/1.91453
Lombardo, S., Campisano, S. U. (1995) Transient current spectroscopy of deep levels in semiā€insulating polycrystalline silicon. Applied Physics Letters, 66 (13). 1641-1643 doi:10.1063/1.113878
 
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