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Hattangady, S. V., Fountain, G. G., Rudder, R. A., Mantini, M. J., Vitkavage, D. J., Markunas, R. J. (1990) Interface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures. Applied Physics Letters, 57 (6). 581-583 doi:10.1063/1.104247

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Reference TypeJournal (article/letter/editorial)
TitleInterface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures
JournalApplied Physics Letters
AuthorsHattangady, S. V.Author
Fountain, G. G.Author
Rudder, R. A.Author
Mantini, M. J.Author
Vitkavage, D. J.Author
Markunas, R. J.Author
Year1990 (August 6)Volume57
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.104247Search in ResearchGate
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Mindat Ref. ID8493075Long-form Identifiermindat:1:5:8493075:0
GUID0
Full ReferenceHattangady, S. V., Fountain, G. G., Rudder, R. A., Mantini, M. J., Vitkavage, D. J., Markunas, R. J. (1990) Interface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures. Applied Physics Letters, 57 (6). 581-583 doi:10.1063/1.104247
Plain TextHattangady, S. V., Fountain, G. G., Rudder, R. A., Mantini, M. J., Vitkavage, D. J., Markunas, R. J. (1990) Interface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures. Applied Physics Letters, 57 (6). 581-583 doi:10.1063/1.104247
In(1990, August) Applied Physics Letters Vol. 57 (6) AIP Publishing

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Vitkavage, D. J., Fountain, G. G., Rudder, R. A., Hattangady, S. V., Markunas, R. J. (1988) Gating of germanium surfaces using pseudomorphic silicon interlayers. Applied Physics Letters, 53 (8). 692-694 doi:10.1063/1.100642
Hattangady, S. V., Mantini, M. J., Fountain, G. G., Rudder, R. A., Markunas, R. J. (1992) The role of an ultrathin silicon interlayer at the SiO2‐Ge interface. Journal of Applied Physics, 71 (8). 3842-3852 doi:10.1063/1.350874
Hattangady, S. V., Rudder, R. A., Mantini, M. J., Fountain, G. G., Posthill, J. B., Markunas, R. J. (1990) Insitucleaning of GaAs surfaces using hydrogen dissociated with a remote noble‐gas discharge. Journal of Applied Physics, 68 (3). 1233-1236 doi:10.1063/1.346723
Hattangady, S. V., Posthill, J. B., Fountain, G. G., Rudder, R. A., Mantini, M. J., Markunas, R. J. (1991) Epitaxial silicon deposition at 300 °C with remote plasma processing using SiH4/H2mixtures. Applied Physics Letters, 59 (3). 339-341 doi:10.1063/1.105589
Posthill, J. B., Rudder, R. A., Hattangady, S. V., Fountain, G. G., Markunas, R. J. (1990) On the feasibility of growing dilute CxSi1−xepitaxial alloys. Applied Physics Letters, 56 (8). 734-736 doi:10.1063/1.102696
Fountain, G. G., Rudder, R. A., Hattangady, S. V., Markunas, R. J., Lindorme, P. S. (1988) Low interface state density SiO2deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces. Journal of Applied Physics, 63 (9). 4744-4746 doi:10.1063/1.340133
Hattangady, S. V., Fountain, G. G., Nicollian, E. H., Markunas, R. J. (1988) Low‐temperature annealing of As‐implanted Ge. Journal of Applied Physics, 63 (1). 68-74 doi:10.1063/1.340464
Malta, D. P., Posthill, J. B., Humphreys, T. P., Thomas, R. E., Fountain, G. G., Rudder, R. A., Hudson, G. C., Mantini, M. J., Markunas, R. J. (1994) Secondary electron emission enhancement and defect contrast from diamond following exposure to atomic hydrogen. Applied Physics Letters, 64 (15). 1929-1931 doi:10.1063/1.111745
Rudder, R. A., Fountain, G. G., Markunas, R. J. (1986) Remote plasma‐enhanced chemical‐vapor deposition of epitaxial Ge films. Journal of Applied Physics, 60 (10). 3519-3522 doi:10.1063/1.337604
Hattangady, S. V., Alley, R. G., Fountain, G. G., Markunas, R. J., Lucovsky, G., Temple, D. (1993) Effect of rf power on remote‐plasma deposited SiO2 films. Journal of Applied Physics, 73 (11). 7635-7642 doi:10.1063/1.353961
Humphreys, T. P., Thomas, R. E., Malta, D. P., Posthill, J. B., Mantini, M. J., Rudder, R. A., Hudson, G. C., Markunas, R. J., Pettenkofer, C. (1997) The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces. Applied Physics Letters, 70 (10). 1257-1259 doi:10.1063/1.118545
 
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