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Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa (1991) B doping using B2H6in gas source Si molecular beam epitaxy. Applied Physics Letters, 58 (18). 1991-1993 doi:10.1063/1.105042

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Reference TypeJournal (article/letter/editorial)
TitleB doping using B2H6in gas source Si molecular beam epitaxy
JournalApplied Physics Letters
AuthorsHirayama, HiroyukiAuthor
Hiroi, MasayukiAuthor
Koyama, KazuhisaAuthor
Year1991 (May 6)Volume58
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.105042Search in ResearchGate
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Mindat Ref. ID8494032Long-form Identifiermindat:1:5:8494032:2
GUID0
Full ReferenceHirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa (1991) B doping using B2H6in gas source Si molecular beam epitaxy. Applied Physics Letters, 58 (18). 1991-1993 doi:10.1063/1.105042
Plain TextHirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa (1991) B doping using B2H6in gas source Si molecular beam epitaxy. Applied Physics Letters, 58 (18). 1991-1993 doi:10.1063/1.105042
In(1991, May) Applied Physics Letters Vol. 58 (18) AIP Publishing

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Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1990) Selective heteroepitaxial growth of Si1−xGexusing gas source molecular beam epitaxy. Applied Physics Letters, 56 (12). 1107-1109 doi:10.1063/1.102582
Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1990) Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy. Applied Physics Letters, 56 (26). 2645-2647 doi:10.1063/1.102863
Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru, Hirayama, Hiroyuki (1992) Intensity oscillations in reflection high‐energy electron diffraction during disilane gas source molecular beam epitaxy. Applied Physics Letters, 60 (14). 1723-1725 doi:10.1063/1.107197
Hirayama, Hiroyuki, Koyama, Kazuhisa, Hiroi, Masayuki, Tatsumi, Toru (1990) B doping effect on reflection high‐energy electron diffraction intensity oscillation during gas source silicon molecular beam epitaxial growth. Applied Physics Letters, 57 (8). 780-782 doi:10.1063/1.103418
Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1991) B doping effect on gas source Si-MBE growth: a comparison of B2H6 gas doping and HBO2 Knudsen cell doping. Journal of Crystal Growth, 111 (1). 856-859 doi:10.1016/0022-0248(91)91096-s
Hirayama, Hiroyuki, Tatsumi, Toru (1989) High doping of phosphorus in Si using gas source molecular beam epitaxy. Applied Physics Letters, 55 (2). 131-133 doi:10.1063/1.102122
Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1990) Gas source Si-MBE. Journal of Crystal Growth, 105 (1). 46-51 doi:10.1016/0022-0248(90)90337-k
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Gas source silicon molecular beam epitaxy using disilane. Applied Physics Letters, 52 (18). 1484-1486 doi:10.1063/1.99106
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1987) Boron heavy doping for Si molecular beam epitaxy using a HBO2source. Applied Physics Letters, 50 (18). 1234-1236 doi:10.1063/1.97919
Koyama, Kazuhisa, Hiroi, Masayuki, Tatsumi, Toru, Hirayama, Hiroyuki (1990) Etching characteristics of Si1−xGexalloy in ammoniac wet cleaning. Applied Physics Letters, 57 (21). 2202-2204 doi:10.1063/1.103912
Hirayama, Hiroyuki, Tatsumi, Toru, Ogura, Atsushi, Aizaki, Naoaki (1987) Gas source silicon molecular beam epitaxy using silane. Applied Physics Letters, 51 (26). 2213-2215 doi:10.1063/1.99009
 
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