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Fang, Z. M., Ma, K. Y., Cohen, R. M., Stringfellow, G. B. (1991) Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1446-1448 doi:10.1063/1.105283

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Reference TypeJournal (article/letter/editorial)
TitleEffect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsFang, Z. M.Author
Ma, K. Y.Author
Cohen, R. M.Author
Stringfellow, G. B.Author
Year1991 (September 16)Volume59
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.105283Search in ResearchGate
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Mindat Ref. ID8495536Long-form Identifiermindat:1:5:8495536:0
GUID0
Full ReferenceFang, Z. M., Ma, K. Y., Cohen, R. M., Stringfellow, G. B. (1991) Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1446-1448 doi:10.1063/1.105283
Plain TextFang, Z. M., Ma, K. Y., Cohen, R. M., Stringfellow, G. B. (1991) Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1446-1448 doi:10.1063/1.105283
In(1991, September) Applied Physics Letters Vol. 59 (12) AIP Publishing

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Fang, Z. M., Ma, K. Y., Jaw, D. H., Cohen, R. M., Stringfellow, G. B. (1990) Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 67 (11). 7034-7039 doi:10.1063/1.345050
Fang, Z. M., Ma, K. Y., Cohen, R. M., Stringfellow, G. B. (1990) Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 68 (3). 1187-1191 doi:10.1063/1.346715
Ma, K. Y., Fang, Z. M., Cohen, R. M., Stringfellow, G. B. (1991) Investigation of organometallic vapor phase epitaxy of InAs and InAsBi at temperatures as low as 275 °C. Journal of Applied Physics, 70 (7). 3940-3942 doi:10.1063/1.349204
Ma, K. Y., Fang, Z. M., Cohen, R. M., Stringfellow, G. B. (1990) Organometallic vapor‐phase epitaxy growth and characterization of Bi‐containing III/V alloys. Journal of Applied Physics, 68 (9). 4586-4591 doi:10.1063/1.346166
Ma, K. Y., Fang, Z. M., Jaw, D. H., Cohen, R. M., Stringfellow, G. B., Kosar, W. P., Brown, D. W. (1989) Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi. Applied Physics Letters, 55 (23). 2420-2422 doi:10.1063/1.102033
Huang, K. T., Chiu, C. T., Cohen, R. M., Stringfellow, G. B. (1994) InAsSbBi alloys grown by organometallic vapor‐phase epitaxy. Journal of Applied Physics, 75 (6). 2857-2863 doi:10.1063/1.356179
Chen, C. H., Kitamura, M., Cohen, R. M., Stringfellow, G. B. (1986) Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 49 (15). 963-965 doi:10.1063/1.97496
Jaw, D. H., Jou, M. J., Fang, Z. M., Stringfellow, G. B. (1990) Optical properties of Ga1−xInxP1−ySbyalloys grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 68 (7). 3538-3543 doi:10.1063/1.346313
Fry, K. L., Kuo, C. P., Cohen, R. M., Stringfellow, G. B. (1985) Photoluminescence of organometallic vapor phase epitaxial GaInAs. Applied Physics Letters, 46 (10). 955-957 doi:10.1063/1.95779
Jen, H. R., Cherng, M. J., Stringfellow, G. B. (1986) Ordered structures in GaAs0.5Sb0.5alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (23). 1603-1605 doi:10.1063/1.96830
Chen, C. H., Fang, Z. M., Stringfellow, G. B., Gedridge, R. W. (1991) Triisopropylantimony for organometallic vapor phase epitaxial growth of GaSb and InSb. Applied Physics Letters, 58 (22). 2532-2534 doi:10.1063/1.104817
 
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