| Reference Type | Journal (article/letter/editorial) |
|---|
| Title | Uniformp‐type impurity‐doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C |
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| Journal | Applied Physics Letters |
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| Authors | Tanaka, T. | Author |
|---|
| Yanagisawa, H. | Author |
| Kakibayashi, H. | Author |
| Minagawa, S. | Author |
| Kajimura, T. | Author |
| Year | 1991 (October 14) | Volume | 59 |
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| Issue | 16 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.106143Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8495909 | Long-form Identifier | mindat:1:5:8495909:2 |
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|
| GUID | 0 |
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| Full Reference | Tanaka, T., Yanagisawa, H., Kakibayashi, H., Minagawa, S., Kajimura, T. (1991) Uniformp‐type impurity‐doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C. Applied Physics Letters, 59 (16). 1943-1945 doi:10.1063/1.106143 |
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| Plain Text | Tanaka, T., Yanagisawa, H., Kakibayashi, H., Minagawa, S., Kajimura, T. (1991) Uniformp‐type impurity‐doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C. Applied Physics Letters, 59 (16). 1943-1945 doi:10.1063/1.106143 |
|---|
| In | (1991, October) Applied Physics Letters Vol. 59 (16) AIP Publishing |
|---|
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