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Lin, Yayun, van Rheenen, Arthur D., Chou, Stephen Y. (1991) Current fluctuations in double‐barrier quantum well resonant tunneling diodes. Applied Physics Letters, 59 (9). 1105-1107 doi:10.1063/1.106358

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Reference TypeJournal (article/letter/editorial)
TitleCurrent fluctuations in double‐barrier quantum well resonant tunneling diodes
JournalApplied Physics Letters
AuthorsLin, YayunAuthor
van Rheenen, Arthur D.Author
Chou, Stephen Y.Author
Year1991 (August 26)Volume59
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.106358Search in ResearchGate
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Mindat Ref. ID8497659Long-form Identifiermindat:1:5:8497659:4
GUID0
Full ReferenceLin, Yayun, van Rheenen, Arthur D., Chou, Stephen Y. (1991) Current fluctuations in double‐barrier quantum well resonant tunneling diodes. Applied Physics Letters, 59 (9). 1105-1107 doi:10.1063/1.106358
Plain TextLin, Yayun, van Rheenen, Arthur D., Chou, Stephen Y. (1991) Current fluctuations in double‐barrier quantum well resonant tunneling diodes. Applied Physics Letters, 59 (9). 1105-1107 doi:10.1063/1.106358
In(1991, August) Applied Physics Letters Vol. 59 (9) AIP Publishing

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Lin, S. D., Lee, C. P. (2003) Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters. Journal of Applied Physics, 93 (5). 2952-2956 doi:10.1063/1.1543631
Ismail, K., Meyerson, B. S., Wang, P. J. (1991) Electron resonant tunneling in Si/SiGe double barrier diodes. Applied Physics Letters, 59 (8). 973-975 doi:10.1063/1.106319
Luryi, Serge (1991) Comment on ‘‘Quantum capacitance of resonant tunneling diodes’’. Applied Physics Letters, 59 (18). 2335-2336 doi:10.1063/1.106061
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Weil, T., Vinter, B. (1987) Equivalence between resonant tunneling and sequential tunneling in double‐barrier diodes. Applied Physics Letters, 50 (18). 1281-1283 doi:10.1063/1.97884
Wu, J. S., Chang, K. H., Lee, C. P., Chang, C. Y., Liu, D. G., Liou, D. C. (1991) Quantum effect in the accumulation layer on field‐induced photoluminescence of double‐barrier resonant tunneling structures. Applied Physics Letters, 59 (1). 87-89 doi:10.1063/1.105532
Hu, Yuming, Stapleton, Shawn (1991) Response to ‘‘Comment on ‘Quantum capacitance of resonant tunneling diodes’ ’’. Applied Physics Letters, 59 (18). 2336 doi:10.1063/1.106062
Guo, H., Diff, K., Neofotistos, G., Gunton, J. D. (1988) Time‐dependent investigation of the resonant tunneling in a double‐barrier quantum well. Applied Physics Letters, 53 (2). 131-133 doi:10.1063/1.100349
Tsuchiya, Masahiro, Sakaki, Hiroyuki (1986) Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures. Applied Physics Letters, 49 (2). 88-90 doi:10.1063/1.97360
Tsujino, S., Usami, N., Weber, A., Mussler, G., Shushunova, V., Grützmacher, D., Azuma, Y., Nakajima, K. (2007) SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio. Applied Physics Letters, 91 (3). 32104pp. doi:10.1063/1.2756363
Hu, Yuming, Stapleton, Shawn (1991) Quantum capacitance of resonant tunneling diodes. Applied Physics Letters, 58 (2). 167-169 doi:10.1063/1.104961
 
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