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Hummel, S. G., Zou, Y., Beyler, C. A., Grodzinski, P., Dapkus, P. D., McManus, J. V., Zhang, Y., Skromme, B. J., Lee, W. I. (1992) Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on‐demand hydride gas generator. Applied Physics Letters, 60 (12). 1483-1485 doi:10.1063/1.107278

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on‐demand hydride gas generator
JournalApplied Physics Letters
AuthorsHummel, S. G.Author
Zou, Y.Author
Beyler, C. A.Author
Grodzinski, P.Author
Dapkus, P. D.Author
McManus, J. V.Author
Zhang, Y.Author
Skromme, B. J.Author
Lee, W. I.Author
Year1992 (March 23)Volume60
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.107278Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8497987Long-form Identifiermindat:1:5:8497987:4
GUID0
Full ReferenceHummel, S. G., Zou, Y., Beyler, C. A., Grodzinski, P., Dapkus, P. D., McManus, J. V., Zhang, Y., Skromme, B. J., Lee, W. I. (1992) Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on‐demand hydride gas generator. Applied Physics Letters, 60 (12). 1483-1485 doi:10.1063/1.107278
Plain TextHummel, S. G., Zou, Y., Beyler, C. A., Grodzinski, P., Dapkus, P. D., McManus, J. V., Zhang, Y., Skromme, B. J., Lee, W. I. (1992) Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on‐demand hydride gas generator. Applied Physics Letters, 60 (12). 1483-1485 doi:10.1063/1.107278
In(1992, March) Applied Physics Letters Vol. 60 (12) AIP Publishing

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Hummel, S. G., Beyler, C. A., Zou, Y., Grodzinski, P., Dapkus, P. D. (1990) Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers. Applied Physics Letters, 57 (7). 695-697 doi:10.1063/1.103595
Yang, G. M., Park, S. G., Seo, K. S., Choe, B. D. (1992) δ‐doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 60 (19). 2380-2382 doi:10.1063/1.107003
Lee, H. C., Hariz, A., Dapkus, P. D., Kost, A., Kawase, M., Garmire, E. (1987) Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (17). 1182-1184 doi:10.1063/1.97904
Hong, C. S., Coleman, J. J., Dapkus, P. D., Liu, Y. Z. (1982) High‐efficiency, low‐threshold, Zn‐diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 40 (3). 208-210 doi:10.1063/1.93042
Dupuis, R. D., Dapkus, P. D., Garner, C. M., Su, C. Y., Spicer, W. E. (1979) Abrupt Ga1−xAlxAs‐GaAs quantum‐well heterostructures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 34 (5). 335-337 doi:10.1063/1.90778
Dzurko, K. M., Menu, E. P., Beyler, C. A., Osinski, J. S., Dapkus, P. D. (1989) Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (2). 105-107 doi:10.1063/1.101242
Lee, B., Baek, J. H., Lee, J. H., Choi, S. W., Jung, S. D., Han, W. S., Lee, E. H. (1996) Optical properties of InGaAs linear graded buffer layers on GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 68 (21). 2973-2975 doi:10.1063/1.116373
DenBaars, S. P., Beyler, C. A., Hariz, A., Dapkus, P. D. (1987) GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy. Applied Physics Letters, 51 (19). 1530-1532 doi:10.1063/1.98625
Skromme, B. J., Bhat, R., Koza, M. A. (1988) Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition. Applied Physics Letters, 52 (12). 990-992 doi:10.1063/1.99251
Dupuis, R. D., Dapkus, P. D. (1977) Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 31 (12). 839-841 doi:10.1063/1.89569
Zou, Y., Grodzinski, P., Menu, E. P., Jeong, W. G., Dapkus, P. D., Alwan, J. J., Coleman, J. J. (1991) Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well. Applied Physics Letters, 58 (6). 601-603 doi:10.1063/1.104570
 
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