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Gao, G. B., Fan, Z. F., Teraguchi, N., Shen, T. C., Morkoç, H. (1993) AlxGa1−xAs/AlyGa1−yAs and GaAs pseudo‐heterojunction bipolar transistors with lateral emitter resistor. Applied Physics Letters, 62 (9). 994-996 doi:10.1063/1.108511

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Reference TypeJournal (article/letter/editorial)
TitleAlxGa1−xAs/AlyGa1−yAs and GaAs pseudo‐heterojunction bipolar transistors with lateral emitter resistor
JournalApplied Physics Letters
AuthorsGao, G. B.Author
Fan, Z. F.Author
Teraguchi, N.Author
Shen, T. C.Author
Morkoç, H.Author
Year1993 (March)Volume62
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.108511Search in ResearchGate
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Mindat Ref. ID8504265Long-form Identifiermindat:1:5:8504265:4
GUID0
Full ReferenceGao, G. B., Fan, Z. F., Teraguchi, N., Shen, T. C., Morkoç, H. (1993) AlxGa1−xAs/AlyGa1−yAs and GaAs pseudo‐heterojunction bipolar transistors with lateral emitter resistor. Applied Physics Letters, 62 (9). 994-996 doi:10.1063/1.108511
Plain TextGao, G. B., Fan, Z. F., Teraguchi, N., Shen, T. C., Morkoç, H. (1993) AlxGa1−xAs/AlyGa1−yAs and GaAs pseudo‐heterojunction bipolar transistors with lateral emitter resistor. Applied Physics Letters, 62 (9). 994-996 doi:10.1063/1.108511
In(1993, March) Applied Physics Letters Vol. 62 (9) AIP Publishing

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Gao, G. B., Fan, Z. F., Morkoç, H. (1992) Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 61 (2). 198-200 doi:10.1063/1.108217
Johnson, F. G., Wicks, G. W. (1993) Raman scattering from square profile, sinusoidal profile, and tilted AlxGa1−xAs/AlyGa1−yAs superlattices. Applied Physics Letters, 62 (16). 1925-1927 doi:10.1063/1.109546
Wang, Z., Lin, M. E., Biswas, D., Mazhari, B., Teraguchi, N., Fan, Z., Gui, X., Morkoç, H. (1993) Si3N4/Si/n‐GaAs capacitor with minimum interface density in the 1010eV−1 cm−2range. Applied Physics Letters, 62 (23). 2977-2979 doi:10.1063/1.109162
Reddy, U. K., Ji, G., Huang, D., Munns, G., Morkoç, H. (1987) Investigation of GaAs/AlxGa1−xAs and InyGa1−yAs/GaAs superlattices on Si substrates. Applied Physics Letters, 50 (24). 1748-1750 doi:10.1063/1.98250
Su, S. L., Fischer, R., Lyons, W. G., Tejayadi, O., Arnold, D., Klem, J., Morkoç, H. (1983) Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy. Journal of Applied Physics, 54 (11). 6725-6731 doi:10.1063/1.331860
Chand, Naresh, Fischer, Russ, Morkoç, Hadis (1985) Collector‐emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 47 (3). 313-315 doi:10.1063/1.96203
Sugg, A. R., Chen, E. I., Richard, T. A., Holonyak, N., Hsieh, K. C. (1993) Native oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers. Applied Physics Letters, 62 (11). 1259-1261 doi:10.1063/1.108700
de Lyon, T. J., Casey, H. C., Enquist, P. M., Hutchby, J. A., SpringThorpe, A. J. (1989) Observation of radiative and nonradiative tunneling in GaAs/AlxGa1−xAs heterojunction bipolar transistors with compositionally graded base‐emitter heterojunctions. Journal of Applied Physics, 65 (8). 3282-3285 doi:10.1063/1.342687
de Lyon, T. J., Casey, H. C., Enquist, P. M., Hutchby, J. A., SpringThorpe, A. J. (1989) Surface recombination current and emitter compositional grading inNpnandPnpGaAs/AlxGa1−xAs heterojunction bipolar transistors. Applied Physics Letters, 54 (7). 641-643 doi:10.1063/1.100904
Sugg, A. R., Chen, E. I., Richard, T. A., Maranowski, S. A., Holonyak, N. (1993) n‐p‐(p+‐n+)‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well laser with p+‐n+ GaAs‐InGaAs tunnel contact on n‐GaAs. Applied Physics Letters, 62 (20). 2510-2512 doi:10.1063/1.109338
Look, D. C., Norris, George B., Kopp, W., Henderson, T., Morkoç, H. (1985) Magnetoresistance method to determine GaAs and AlxGa1−xAs mobilities in AlxGa1−xAs/GaAs modulation‐doped field‐effect transistor structures. Applied Physics Letters, 47 (3). 267-269 doi:10.1063/1.96186
 
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