Salnick, A., Mandelis, A., Jean, C. (1997) Infrared photothermal radiometric deep-level transient spectroscopy of shallow B+ dopant states in p-Si. Applied Physics Letters, 71 (18). 2671-2673 doi:10.1063/1.120174
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Infrared photothermal radiometric deep-level transient spectroscopy of shallow B+ dopant states in p-Si | ||
Journal | Applied Physics Letters | ||
Authors | Salnick, A. | Author | |
Mandelis, A. | Author | ||
Jean, C. | Author | ||
Year | 1997 (November 3) | Volume | 71 |
Issue | 18 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.120174Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8519783 | Long-form Identifier | mindat:1:5:8519783:9 |
GUID | 0 | ||
Full Reference | Salnick, A., Mandelis, A., Jean, C. (1997) Infrared photothermal radiometric deep-level transient spectroscopy of shallow B+ dopant states in p-Si. Applied Physics Letters, 71 (18). 2671-2673 doi:10.1063/1.120174 | ||
Plain Text | Salnick, A., Mandelis, A., Jean, C. (1997) Infrared photothermal radiometric deep-level transient spectroscopy of shallow B+ dopant states in p-Si. Applied Physics Letters, 71 (18). 2671-2673 doi:10.1063/1.120174 | ||
In | (1997, November) Applied Physics Letters Vol. 71 (18) AIP Publishing |
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