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Chia, C. K., David, J. P. R., Rees, G. J., Robson, P. N., Plimmer, S. A., Grey, R. (1997) Electron multiplication in AlxGa1−xAs/GaAs heterostructures. Applied Physics Letters, 71 (26). 3877-3879 doi:10.1063/1.120531

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Reference TypeJournal (article/letter/editorial)
TitleElectron multiplication in AlxGa1−xAs/GaAs heterostructures
JournalApplied Physics Letters
AuthorsChia, C. K.Author
David, J. P. R.Author
Rees, G. J.Author
Robson, P. N.Author
Plimmer, S. A.Author
Grey, R.Author
Year1997 (December 29)Volume71
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.120531Search in ResearchGate
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Mindat Ref. ID8520206Long-form Identifiermindat:1:5:8520206:1
GUID0
Full ReferenceChia, C. K., David, J. P. R., Rees, G. J., Robson, P. N., Plimmer, S. A., Grey, R. (1997) Electron multiplication in AlxGa1−xAs/GaAs heterostructures. Applied Physics Letters, 71 (26). 3877-3879 doi:10.1063/1.120531
Plain TextChia, C. K., David, J. P. R., Rees, G. J., Robson, P. N., Plimmer, S. A., Grey, R. (1997) Electron multiplication in AlxGa1−xAs/GaAs heterostructures. Applied Physics Letters, 71 (26). 3877-3879 doi:10.1063/1.120531
In(1997, December) Applied Physics Letters Vol. 71 (26) AIP Publishing

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Chia, C. K., David, J. P. R., Plimmer, S. A., Rees, G. J., Grey, R., Robson, P. N. (2000) Avalanche multiplication in submicron AlxGa1−xAs/GaAs multilayer structures. Journal of Applied Physics, 88 (5). 2601-2608 doi:10.1063/1.1286329
Chia, C. K., David, J. P. R., Rees, G. J., Plimmer, S. A., Grey, R., Robson, P. N. (1998) Impact ionization in AlxGa1−xAs/GaAs single heterostructures. Journal of Applied Physics, 84 (8). 4363-4369 doi:10.1063/1.368656
Chia, C. K, Ng, B. K., David, J. P. R., Rees, G. J., Tozer, R. C., Hopkinson, M., Airey, R. J., Robson, P. N. (2003) Multiplication and excess noise in AlxGa1−xAs/GaAs multilayer avalanche photodiodes. Journal of Applied Physics, 94 (4). 2631-2637 doi:10.1063/1.1593217
David, J. P. R., Allam, J., Adams, A. R., Roberts, J. S., Grey, R., Rees, G. J., Robson, P. N. (1995) Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga0.7As/GaAs multilayers. Applied Physics Letters, 66 (21). 2876-2878 doi:10.1063/1.113459
Plimmer, S. A., David, J. P. R., Rees, G. J., Grey, R., Herbert, D. C., Wight, D. R., Higgs, A. W. (1997) Impact ionization in thin AlxGa1−xAs (x=0.15 and 0.30)p-i-ndiodes. Journal of Applied Physics, 82 (3). 1231-1235 doi:10.1063/1.365940
Ong, D. S., Li, K. F., Plimmer, S. A., Rees, G. J., David, J. P. R., Robson, P. N. (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes. Journal of Applied Physics, 87 (11). 7885-7891 doi:10.1063/1.373472
David, J. P. R., Morley, M. J., Wolstenholme, A. R., Grey, R., Pate, M. A., Hill, G., Rees, G. J., Robson, P. N. (1992) Enhanced breakdown voltages in strained InGaAs/GaAs structures. Applied Physics Letters, 61 (17). 2042-2044 doi:10.1063/1.108354
Ng, B. K., David, J. P. R., Plimmer, S. A., Hopkinson, M., Tozer, R. C., Rees, G. J. (2000) Impact ionization coefficients of Al0.8Ga0.2As. Applied Physics Letters, 77 (26). 4374-4376 doi:10.1063/1.1336556
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